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Direct observation of tunnelled intergrowth in SnO2/Ga2O3 complex nanowires

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dc.contributor.authorAlonso Orts, Manuel
dc.contributor.authorNogales Díaz, Emilio
dc.contributor.authorMéndez Martín, María Bianchi
dc.contributor.authorRigby, Oliver M.
dc.contributor.authorStamp, Alice V.
dc.contributor.authorHindmarsh, Steve A.
dc.contributor.authorSánchez, Ana M.
dc.date.accessioned2023-06-17T13:18:47Z
dc.date.available2023-06-17T13:18:47Z
dc.date.issued2019-02-01
dc.description© 2019 IOP Publishing We thank JJP Peters for his input on the multislice ADF simulation. This work has been supported by MINECO projects MAT-2015-65274-R/FEDER and M-ERANET PCIN-2017-106. MA-O acknowledges financial support from MECD (FPU contract).
dc.description.abstractbeta-Ga_2O_3 intergrowths have been revealed in the SnO_2 rutile structure when SnO_2/Ga_2O_3 complex nanostructures are grown by thermal evaporation with a catalyst-free basis method. The structure is formed by a Ga_2O_3 nanowire trunk, around which a rutile SnO_2 particle is formed with [001] aligned to the [010] Ga_2O_3 trunk axis. Inside the SnO_2 particle, beta-Ga_2O_3 units occur separated periodically by hexagonal tunnels in the (210) rutile plane. Orange (620 nm) optical emission from tin oxide, with a narrow linewidth indicating localised electronic states, may be associated with this beta-Ga_2O_3 intergrowth.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Economía y Competitividad (MINECO)
dc.description.sponsorshipMinisterio de Educación, Cultura y Deporte (MECD)
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/50708
dc.identifier.doi10.1088/1361-6528/aaefc4
dc.identifier.issn0957-4484
dc.identifier.officialurlhttp://dx.doi.org/10.1088/1361-6528/aaefc4
dc.identifier.relatedurlhttp://iopscience.iop.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/12999
dc.issue.number5
dc.journal.titleNanotechnology
dc.language.isoeng
dc.publisherIOP Publishing
dc.relation.projectIDMAT-2015-65274-R/FEDER
dc.relation.projectIDM-ERA.NET
dc.relation.projectIDPCIN-2017-106
dc.relation.projectIDMECD (FPU contract)
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España
dc.rights.accessRightsopen access
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject.cdu538.9
dc.subject.keywordSno2
dc.subject.keywordOxide
dc.subject.keywordGrowth
dc.subject.keywordPhotoluminescence
dc.subject.keywordPerformance
dc.subject.keywordWide band gap oxides
dc.subject.keywordTransmission electron microscopy
dc.subject.keywordTunnelled intergrowth
dc.subject.keywordCathodoluminescence
dc.subject.ucmFísica de materiales
dc.subject.ucmFísica del estado sólido
dc.subject.unesco2211 Física del Estado Sólido
dc.titleDirect observation of tunnelled intergrowth in SnO2/Ga2O3 complex nanowires
dc.typejournal article
dc.volume.number30
dspace.entity.typePublication
relation.isAuthorOfPublication1e7a18b4-d4bc-464f-8344-66a453f96dd2
relation.isAuthorOfPublicationf65096c2-6796-43bf-a661-9e2079b73d1c
relation.isAuthorOfPublication465cfd5b-6dd4-4a48-a6e3-160df06f7046
relation.isAuthorOfPublication.latestForDiscovery1e7a18b4-d4bc-464f-8344-66a453f96dd2

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