Assessment of InGaSb crystals by cathodo-luminescence microscopy and spectroscopy

dc.contributor.authorChioncel, M. F.
dc.contributor.authorDíaz-Guerra Viejo, Carlos
dc.contributor.authorPiqueras de Noriega, Javier
dc.contributor.authorDuhanian, N.
dc.contributor.authorDuffar, T.
dc.date.accessioned2023-06-20T10:45:09Z
dc.date.available2023-06-20T10:45:09Z
dc.date.issued2004-03
dc.description© Natl Inst Optoelectronics. This work was carried out in the frame of the Fifth Framework European Programme for research; HPRN-CT 2001-00199 project. MFC acknowledges European Commission for financial support.
dc.description.abstractLow band-gap InGaSb crystals are of interest for the development of thermo-photo-voltaic (TPV) cells and other devices operating in the infrared spectral range. In this work, cathodoluminescence (CL) in the scanning electron microscope (SEM) has been applied to study the homogeneity of InGaSb material grown by the vertical Bridgman technique with regard to effective incorporation of In to the ternary alloy and the nature and distribution of defects influencing the luminescence properties of this semiconductor. Back-scattered electron imaging and wavelength dispersive X-ray mapping were used as complementary techniques to CL for analysis of chemical composition and element distribution. The results show that local CL spectra provide information on the effective formation of the alloy, not revealed by other techniques.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipFifth Framework European Programme for research
dc.description.sponsorshipEuropean Commission
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26215
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dc.identifier.issn1454-4164
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51147
dc.issue.number1
dc.journal.titleJournal of Optoelectronics and Advanced Materials
dc.page.final241
dc.page.initial239
dc.publisherNatl Inst Optoelectronics
dc.relation.projectIDHPRN-CT 2001-00199
dc.rights.accessRightsmetadata only access
dc.subject.cdu538.9
dc.subject.keywordGasb
dc.subject.keywordGrowth
dc.subject.keywordAlloys
dc.subject.keywordInsb
dc.subject.ucmFísica de materiales
dc.titleAssessment of InGaSb crystals by cathodo-luminescence microscopy and spectroscopy
dc.typejournal article
dc.volume.number6
dspace.entity.typePublication
relation.isAuthorOfPublicationb1b44979-3a0d-45d7-aa26-a64b0dbfee18
relation.isAuthorOfPublication.latestForDiscoveryb1b44979-3a0d-45d7-aa26-a64b0dbfee18
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