N-2 remote plasma cleaning of InP to improve SiNx : H/InP interface performance
| dc.book.title | Microelectronics Reliability | |
| dc.contributor.author | Martil De La Plaza, Ignacio | |
| dc.contributor.author | González Díaz, Germán | |
| dc.date.accessioned | 2023-06-20T19:05:38Z | |
| dc.date.available | 2023-06-20T19:05:38Z | |
| dc.date.issued | 2000-04 | |
| dc.description | Workshop on Dielectrics in Microelectronics (10. 1999. Barcelona). © Elsevier Science Ltd. The authors would like to thank CAI de Implantación Iónica from the Complutense University in Madrid for technical assistance with the ECR-CVD system. This research was partially supported by the Spanish government under Grant no. TIC 98/0740. | |
| dc.description.abstract | Cleaning of InP surfaces using electron cyclotron resonance (ECR) nitrogen plasmas has been studied. Electrical performance of Al/SiNx:H/InP structures has been analysed to determine the effect of the plasma cleaning. The SINx:H insulator layers are deposited at 200 degrees C using an ECR chemical vapour deposition technique. It is observed that a 30 s low-power (60 W) ECR N-2 plasma treatment of InP surface reduces the interface defects and improves the resistivity and breakdown held values of the SiNx:H. (C) 2000 Elsevier Science Ltd. All rights reserved. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | Spanish government | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/26801 | |
| dc.identifier.doi | 10.1016/S0026-2714(99)00322-4 | |
| dc.identifier.issn | 0026-2714 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1016/S0026-2714(99)00322-4 | |
| dc.identifier.relatedurl | http://www.sciencedirect.com | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59236 | |
| dc.issue.number | 4-5 | |
| dc.journal.title | Microelectronics reliability | |
| dc.language.iso | eng | |
| dc.page.final | 840 | |
| dc.page.initial | 837 | |
| dc.page.total | 4 | |
| dc.publication.place | Oxford, England | |
| dc.publisher | Pergamon-Elsevier Science Ltd. | |
| dc.relation.ispartofseries | Workshop on Dielectrics in Microelectronics | |
| dc.relation.projectID | TIC 98/0740 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Electrical-Properties | |
| dc.subject.keyword | Surface | |
| dc.subject.keyword | Nitridation | |
| dc.subject.keyword | Devices. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | N-2 remote plasma cleaning of InP to improve SiNx : H/InP interface performance | |
| dc.type | journal article | |
| dc.volume.number | 40 | |
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| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 6db57595-2258-46f1-9cff-ed8287511c84 | |
| relation.isAuthorOfPublication | a5ab602d-705f-4080-b4eb-53772168a203 | |
| relation.isAuthorOfPublication.latestForDiscovery | a5ab602d-705f-4080-b4eb-53772168a203 |
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