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Radiation effects on CMOS R/2R ladder digital-to-analog converters

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dc.book.titleProceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003, RADECS 2003
dc.conference.titleRadiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
dc.contributor.authorFranco Peláez, Francisco Javier
dc.contributor.authorLozano Rogado, Jesús
dc.contributor.authorAgapito Serrano, Juan Andrés
dc.date.accessioned2023-06-20T13:41:45Z
dc.date.available2023-06-20T13:41:45Z
dc.date.issued2003-09-15
dc.description©ESA ©IEEE ISSN: 0379-6566 Radiation Effects on Components and Systems (RADECS 2003) (7. 2003. Noordwijk, Holanda) This work was supported by the cooperation agreement K476LHC between CERN & UCM, by the Spanish research agency ClCYT (FPA2002- 009l2), partially supported by ITN and by the private foundation "Migel Casado San José"
dc.description.abstractThe behaviour of CMOS R/2R ladder D/A converters when they are irradiated simultaneously with gamma and neutron radiation is described. The converters suffer an increase of the offset error and a reduction of the linearity because of the malfunction of the internal CMOS switches and the appearance of leakage currents. The effective inputs become "1" whatever the actual input is. No evidence of neutron damage was found.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Educación y Ciencia
dc.description.sponsorshipCERN
dc.description.sponsorshipInstituto Tecnologico e Nuclear, Portugal
dc.description.sponsorshipUniversidad Complutense de Madrid
dc.description.sponsorshipCICYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/29386
dc.identifier.isbn92-9092-846-8
dc.identifier.officialurlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=1442541
dc.identifier.relatedurlhttp://ieeexplore.ieee.org/
dc.identifier.relatedurlhttps://www.nasa.gov/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/53416
dc.issue.number536
dc.language.isoeng
dc.page.final578
dc.page.initial571
dc.page.total8
dc.publication.placeNoordwijk aan Zee (The Netherlands)
dc.publisherESA Publications Division
dc.relation.ispartofseriesEuropean Space Agency -Publications- ESA Sp
dc.relation.projectIDFPA2002- 00912
dc.relation.projectIDK476/LHC
dc.rights.accessRightsopen access
dc.subject.cdu537.8
dc.subject.keywordCMOS technology
dc.subject.keywordDigital-analog conversion
dc.subject.keywordHelium
dc.subject.keywordLarge hadron collider
dc.subject.keywordNeutrons
dc.subject.keywordPhysics
dc.subject.keywordRadiation effects
dc.subject.keywordResistors
dc.subject.keywordTesting
dc.subject.keywordVoltage
dc.subject.keywordAccelerators
dc.subject.keywordD/A converters
dc.subject.keywordNIEL
dc.subject.keywordTID
dc.subject.ucmElectrónica (Física)
dc.subject.ucmRadiactividad
dc.titleRadiation effects on CMOS R/2R ladder digital-to-analog converters
dc.typebook part
dcterms.references[1] The LHC Study Group, “The Large Hadron Collider Conceptual Design,” Tech. Rep., 1995. [2] D. A. Johns and K. Martin, Analog Integrated Circuit Design. John Wiley, 1997. [3] “Analog Devices Inc.” http://www.analog.com. [4] “Maxim Integrated Products,” http://maxim-ic.com. [5] W. K. Chien, The VLSI Handbook. CRC Press, 2000. [6] M. Alexander, “Understanding and preventing latch-up in CMOS DACs,” App. Note AN-109, Analog Devices, [Online] Available: http://www.analog.com/media/en/technical-documentation/application-notes/20809090AN109.pdf. [7] J. Lozano, F. J. Franco, J. P. Santos, and J. A. Agapito, “Instrumentation system for test of electronic components subjected to neutron radiation,” in Proceedings of the SAAEI 2002, Sep. 2002. [8] J. R. Srour and J. M. McGarrity, “Radiation effects on microelectronics in space,” Proceedings of the IEEE, vol. 76, no. 11, pp. 1443–1469, Nov 1988. [9] S. E. Kerns, B. D. Shafer, N. van Vonno, and F. E. Barber, “The design of radiation-hardened ICs for space: a compendium of approaches,” Proceedings of the IEEE, vol. 76, no. 11, pp. 1470–1509, Nov 1988. [10] S. M. Sze, Physics of Semiconductor Devices. USA: John Wiley & Sons, Inc., 1981. [11] O. Flament, C. Chabrerie, V. Ferlet-Cavrois, and J. L. Leray, “A methodology to study lateral parasitic transistors in CMOS technologies,” IEEE Transaction on Nuclear Science, vol. 45, no. 3, pp. 1385–1389, Jun 1998. [12] H. Kamimura, M. Sakagami, S. Uchida, and M. Kato, “Total-dose hardness assurance-testing for CMOS devices in space environment,” in Proceedings of the Annual IEEE Reliability and Maintainability Symposium, Jan 1992, pp. 202–209. [13] G. C. Messenger, “A summary review of displacement damage from high energy radiation in silicon semiconductors and semiconductor devices,” IEEE Transactions on Nuclear Science, vol. 39, no. 3, pp. 468–473, Jun 1992. [14] G. C. Messenger and M. S. Ash, The Effects of Radiation on Electronic Systems, 2nd ed. New York: Van Nostrand Reinhold, 1992. [15] P. Horowitz and W. Hill, The Art of Electronics, 2nd ed. USA: Cambridge University Press, 1989. [16] M. S. Tyagi, Introduction fo Semiconductor Materials and Devices. Singapore: John Wiley & Sons, Inc., 1991. [17] P. C. Maulik, “Analysis of leakage current induced nonlinearity in resistor-ladder based data converters,” IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, vol. 47, no. 2, pp. 136–137, Feb 2000. [18] A. Sharma, K. Sahu, and S. Brashears, “Total ionizing dose (TID) evaluation results of low dose rate testing for NASA programs,” in IEEE Radiation Effects Data Workshop, 1996., Jul 1996, pp. 13–18. [19] M. O’Bryan, K. LaBel, R. Reed, J. Howard, R. Ladbury, J. Barth, S. Kniffin, C. Seidleck, P. Marshall, C. Marshall, H. Kim, D. Hawkins, A. Sanders, M. Carts, J. Forney, D. Roth, J. Kinnison, E. Nhan, and K. Sahu, “Radiation damage and single event effect results for candidate spacecraft electronics,” in IEEE Radiation Effects Data Workshop, 2000, 2000, pp. 106–122.
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relation.isAuthorOfPublication662ba05f-c2fc-4ad7-9203-36924c80791a
relation.isAuthorOfPublication.latestForDiscovery662ba05f-c2fc-4ad7-9203-36924c80791a

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