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Ti supersaturated Si by microwave annealing processes

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dc.contributor.authorOlea Ariza, Javier
dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorPastor Pastor, David
dc.contributor.authorGarcía Hemme, Eric
dc.contributor.authorCaudevilla Gutiérrez, Daniel
dc.contributor.authorAlgaidy, Sari
dc.contributor.authorPérez Zenteno, Francisco José
dc.contributor.authorDuarte Cano, Sebastián
dc.contributor.authorGarcía Hernansanz, Rodrigo
dc.contributor.authorPrado Millán, Álvaro Del
dc.contributor.authorSan Andrés Serrano, Enrique
dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorLee, Yao-Jen
dc.contributor.authorHong, Tzu-Chieh
dc.contributor.authorChao, Tien-Sheng
dc.date.accessioned2023-11-17T18:29:27Z
dc.date.available2023-11-17T18:29:27Z
dc.date.issued2023
dc.description.abstractMicrowave annealing (MWA) processes were used for the first time to obtain Ti supersaturated Si. High Ti doses were ion implanted on Si substrates and subsequently MWA processed to recrystallize the amorphous layer. The resulting layers were monocrystalline with a high density of defects. Ti depth profiles indicate that diffusion is avoided once recrystallization is produced. Finally, the electronic transport properties measurements point to a decoupling effect between the Si:Ti layer and the substrate. The implanted layer present also a shallow donor and very high Hall mobility.en
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipUniversidad Complutense de Madrid
dc.description.sponsorshipEuropean Commssion
dc.description.sponsorshipMinisterio de Ciencia, Innovación y Universidades (España)
dc.description.sponsorshipMinistry of Education (Arabia Saudita)
dc.description.sponsorshipConsejo Nacional de Humanidades, Ciencias y Tecnologías (México)
dc.description.statuspub
dc.identifier.citationJ. Olea, G. González-Díaz, D. Pastor, E. García-Hemme, D. Caudevilla, S. Algaidy, F. Pérez-Zenteno, S. Duarte-Cano, R. García-Hernansanz, A. Del Prado, E. S. Andrés, I. Mártil, Y.-J. Lee, T.-C. Hong, and T.-S. Chao, Semicond. Sci. Technol. 38, 024004 (2023).
dc.identifier.doi10.1088/1361-6641/acac4a
dc.identifier.essn1361-6641
dc.identifier.issn0268-1242
dc.identifier.officialurlhttp://dx.doi.org/10.1088/1361-6641/acac4a
dc.identifier.relatedurlhttps://iopscience.iop.org/article/10.1088/1361-6641/acac4a/meta
dc.identifier.urihttps://hdl.handle.net/20.500.14352/88805
dc.issue.number2
dc.journal.titleSemiconductor Science and Technology
dc.language.isoeng
dc.publisherIOP Publishing
dc.relation.projectIDinfo:eu-repo/grantAgreement/CAM-ERDF/MADRID-PV2/S2018/EMT-4308
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-116508RB-I00
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-117498RB-I00
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/TEC2017-84378-R
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen
dc.rights.accessRightsopen access
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject.cdu538.9
dc.subject.keywordSupersaturated
dc.subject.keywordMicrowave
dc.subject.keywordSilicon
dc.subject.keywordTitanium
dc.subject.keywordInfrared
dc.subject.keywordMicroelectronics
dc.subject.keywordImplantation
dc.subject.ucmFísica del estado sólido
dc.subject.unesco2211 Física del Estado Sólido
dc.titleTi supersaturated Si by microwave annealing processesen
dc.typejournal article
dc.type.hasVersionAM
dc.volume.number38
dspace.entity.typePublication
relation.isAuthorOfPublication12efa09d-69f7-43d4-8a66-75d05b8fe161
relation.isAuthorOfPublicationa5ab602d-705f-4080-b4eb-53772168a203
relation.isAuthorOfPublication0f0a0600-ce06-4d5b-acee-eb68dd4c9853
relation.isAuthorOfPublication765f38c4-71cb-441b-b2a8-d88c5cdcf086
relation.isAuthorOfPublicationc0b8544d-8c06-45e3-815f-f7ddb6aeff49
relation.isAuthorOfPublicatione3b2b0e4-2e17-4bd4-a1cd-521cc7f0abcd
relation.isAuthorOfPublication838d6660-e248-42ad-b8b2-0599f3a4542b
relation.isAuthorOfPublication7a3a1475-b9cc-4071-a7d3-fbf68fe1dce0
relation.isAuthorOfPublication21e27519-52b3-488f-9a2a-b4851af89a71
relation.isAuthorOfPublication6db57595-2258-46f1-9cff-ed8287511c84
relation.isAuthorOfPublication.latestForDiscovery12efa09d-69f7-43d4-8a66-75d05b8fe161

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