Bimodal ionic photomemristor based on a high-temperature oxide superconductor/semiconductor junction

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dc.contributor.authorEl Hage, Ralph
dc.contributor.authorHumbert, Vincent
dc.contributor.authorRouco Gómez, Víctor
dc.contributor.authorSánchez Santolino, Gabriel
dc.contributor.authorLagarrigue, Aurelien
dc.contributor.authorSeurre, Kevin
dc.contributor.authorCarreira, Santiago J. J.
dc.contributor.authorSander, Anke
dc.contributor.authorCharliac, Jerome
dc.contributor.authorMesoraca, Salvatore
dc.contributor.authorTrastoy, Juan
dc.contributor.authorBriatico, Javier
dc.contributor.authorSantamaría Sánchez-Barriga, Jacobo
dc.contributor.authorVillegas, Javier E. E.
dc.date.accessioned2023-08-01T14:36:46Z
dc.date.available2023-08-01T14:36:46Z
dc.date.issued2023-05-25
dc.description© The Author(s) 2023 Work supported by ERC grant N° 647100 “SUSPINTRONICS”, ERC grant N° 966735 “SUPERMEM”, French ANR grant ANR-17-CE30-0018-04 “OPTOFLUXONICS”, COST Action CA 21144 superqumap, and Spanish AEI PID2020-118078RB-I00. J.S. thanks the D’Alembert program funded by the IDEX Paris-Saclay, ANR-11-IDEX-0003-02, for financing a stay at Unité Mixte CNRS/Thales. We (J.S., J.E.V.) acknowledge funding from Flag ERA ERA-NET To2Dox project. J.S. acknowledges AEI through grant PID2020-118078RB-I00. G.S.-S. acknowledges financial support from Spanish MCI Grant Nos. RTI2018-099054-J-I00 (MCI/AEI/FEDER, UE) and IJC2018-038164-I. Electron microscopy observations were carried out at the Centro Nacional de Microscopia Electronica, CNME-UCM.
dc.description.abstractDesigning efficient photonic neuromorphic systems remains a challenge. Here, the authors develop a new class of memristor sensitive to the dual electro-optical history obtained by exploiting electrochemical, photovoltaic and photo-assisted oxygen ion motion effects at a high temperature superconductor / semiconductor interface. Memristors, a cornerstone for neuromorphic electronics, respond to the history of electrical stimuli by varying their electrical resistance across a continuum of states. Much effort has been recently devoted to developing an analogous response to optical excitation. Here we realize a novel tunnelling photo-memristor whose behaviour is bimodal: its resistance is determined by the dual electrical-optical history. This is obtained in a device of ultimate simplicity: an interface between a high-temperature superconductor and a transparent semiconductor. The exploited mechanism is a reversible nanoscale redox reaction between both materials, whose oxygen content determines the electron tunnelling rate across their interface. The redox reaction is optically driven via an interplay between electrochemistry, photovoltaic effects and photo-assisted ion migration. Besides their fundamental interest, the unveiled electro-optic memory effects have considerable technological potential. Especially in combination with high-temperature superconductivity which, in addition to facilitating low-dissipation connectivity, brings photo-memristive effects to the realm of superconducting electronics.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipUnión Europea. H2020
dc.description.sponsorshipMinisterio de Ciencia e Innovación (MICINN)
dc.description.sponsorshipAgence Nationale de la Recherche (ANR)
dc.description.statuspub
dc.identifier.doi10.1038/s41467-023-38608-0
dc.identifier.essn2041-1723
dc.identifier.officialurlhttps://www.nature.com/articles/s41467-023-38608-0
dc.identifier.relatedurlhttp://dx.doi.org/10.1038/s41467-023-38608-0
dc.identifier.urihttps://hdl.handle.net/20.500.14352/87377
dc.issue.number1
dc.journal.titleNature communications
dc.language.isoeng
dc.publisherNature Portfolio
dc.relation.projectIDinfo:eu-repo/grantAgreement/ERC/H2020/647100 /EU//SUSPINTRONICS
dc.relation.projectIDinfo:eu-repo/grantAgreement/ERC/H2020/966735 /EU//SUPERMEM
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC//CA21144 /EU/SUPERCONDUCTING NANODEVICES AND QUANTUM MATERIALS FOR COHERENT MANIPULATION/SUPERQUMAP
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC//12345/EU/ JTC-2019_016/To2Dox
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-118078RB-I00/ES/NUEVAS FUNCIONALIDADES PARA UNA ELECTRONICA DE OXIDOS 2D: MATERIA CUANTICA INDUCIDA POR EFFECTOS DE PROXIMIDAD/
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/RTI2018-099054-J-I00/ES/VISUALIZACION DEL CAMPO ELECTRICO EN DISPOSITIVOS BASADOS EN MATERIALES BI-DIMENSIONALES/
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI//IJC2018-038164-I/ES
dc.relation.projectIDinfo:eu-repo/grantAgreement///ANR-17-CE30-0018-04 /FR//OPTOFLUXONICS
dc.relation.projectIDinfo:eu-repo/grantAgreement///ANR-11-IDEX-0003-02 /FR
dc.rightsAttribution 4.0 Internationalen
dc.rights.accessRightsopen access
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subject.cdu538.9
dc.subject.keywordThin-Films
dc.subject.keywordTunnel-Junctions
dc.subject.keywordMechanisms
dc.subject.keywordMemristors
dc.subject.ucmFísica de materiales
dc.subject.unesco2211 Física del Estado Sólido
dc.titleBimodal ionic photomemristor based on a high-temperature oxide superconductor/semiconductor junction
dc.typejournal article
dc.type.hasVersionVoR
dc.volume.number14
dspace.entity.typePublication
relation.isAuthorOfPublicationebb880e7-8364-42f3-8e48-421bfd671774
relation.isAuthorOfPublication3ea619be-11c2-4a85-a759-62adf0de8be7
relation.isAuthorOfPublication75fafcfc-6c46-44ea-b87a-52152436d1f7
relation.isAuthorOfPublication.latestForDiscovery3ea619be-11c2-4a85-a759-62adf0de8be7
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