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Transient lateral photovoltaic effect in patterned metal-oxide-semiconductor films

dc.contributor.authorCascales, J. P.
dc.contributor.authorMartínez, I.
dc.contributor.authorDíaz, D.
dc.contributor.authorRodrigo Martín-Romo, José Augusto
dc.contributor.authorAliev, F. G.
dc.date.accessioned2023-06-19T13:33:03Z
dc.date.available2023-06-19T13:33:03Z
dc.date.issued2014-06-09
dc.description© 2014 AIP Publishing LLC. The authors acknowledge A. Levanuyk for his interest and fruitful discussions, L. Martin for her simulations on the initial stages of the work and Ch. van Haesendock for preparing the samples. This work has been supported by the Spanish MINECO (MAT2012- 32743) and Comunidad de Madrid (P2009/MAT-1726) grants.
dc.description.abstractThe time dependent transient lateral photovoltaic effect has been studied with ls time resolution and with chopping frequencies in the kHz range, in lithographically patterned 21 nm thick, 5, 10, and 20 lm wide, and 1500 lm long Co lines grown over naturally passivated p-type Si (100). We have observed a nearly linear dependence of the transitorial response with the laser spot position. A transitorial response with a sign change in the laser-off stage has been corroborated by numerical simulations. A qualitative explanation suggests a modification of the drift-diffusion model by including the influence of a local inductance. Our findings indicate that the microstructuring of position sensitive detectors could improve their space-time resolution.
dc.description.departmentDepto. de Óptica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipSpanish MINECO
dc.description.sponsorshipComunidad de Madrid
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/29605
dc.identifier.doi10.1063/1.4882701
dc.identifier.issn0003-6951
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.4882701
dc.identifier.relatedurlhttp://scitation.aip.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/33995
dc.issue.number23
dc.journal.titleApplied physics letters
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.projectIDMAT2012-32743
dc.relation.projectIDNANOBIOMAGNET-CM (S2009/MAT-1726)
dc.rights.accessRightsopen access
dc.subject.cdu535
dc.subject.keywordSilicon
dc.subject.keywordSurface.
dc.subject.ucmÓptica (Física)
dc.subject.unesco2209.19 Óptica Física
dc.titleTransient lateral photovoltaic effect in patterned metal-oxide-semiconductor films
dc.typejournal article
dc.volume.number104
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