Publication:
CL study of blue and UV emissions in ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN

dc.contributor.authorGuzmán Navarro, G
dc.contributor.authorHerrera Zaldivar, M.
dc.contributor.authorValenzuela Benavides, J.
dc.contributor.authorMaestre Varea, David
dc.date.accessioned2023-06-20T00:34:14Z
dc.date.available2023-06-20T00:34:14Z
dc.date.issued2011-07-01
dc.description©2011 American Institute of Physics This work was partially supported by grants from CONACyT (Grant No. 102519) and PAPIIT-UNAM (Grant No. IN102111), Mexico. Technical help from E. Aparicio, E. Flores, F. Ruiz, A. Tiznado, I. Gradilla, D. Domínguez, and L. Gradilla is greatly appreciated.
dc.description.abstractWe report a cathodoluminescence (CL) study of ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN on Si(100) and Au/Si(00) substrates. Condensation and subsequent oxidation of metallic Ga is suggested as the growth mechanism of ß-Ga_2O_3 nanowires. The ß-Ga_2O_3 nanowires grown on Si(100) show multiple bends or undulations, together with a strong UV emission at 3.31 eV and a weak blue emission centered at 2.8 eV as a band component. The ß-Ga_2O_3 nanowires grown on Au/Si(100) substrates recorded a lower CL intensity of a well-defined blue emission of 2.8 eV. A thermal treatment on these samples produced an increase of the UV emission and quenching of the blue band. Thermal annealing of oxygen vacancies is proposed as the responsible mechanism for the observed behavior of these samples.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipCONACyT
dc.description.sponsorshipPAPIIT-UNAM
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/44851
dc.identifier.doi10.1063/1.3620986
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.3620986
dc.identifier.relatedurlhttp://aip.scitation.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/42746
dc.issue.number3
dc.journal.titleJournal of applied physics
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.projectIDGrant No. 102519
dc.relation.projectIDGrant No. IN102111
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordLuminescence
dc.subject.ucmFísica de materiales
dc.subject.ucmFísica del estado sólido
dc.subject.unesco2211 Física del Estado Sólido
dc.titleCL study of blue and UV emissions in ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN
dc.typejournal article
dc.volume.number110
dspace.entity.typePublication
relation.isAuthorOfPublication43cbf291-2f80-4902-8837-ea2a9ffaa702
relation.isAuthorOfPublication.latestForDiscovery43cbf291-2f80-4902-8837-ea2a9ffaa702
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