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Influence of Randomness during the Interpretation of Results from Single-Event Experiments on SRAMs

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dc.contributor.authorFranco Peláez, Francisco Javier
dc.contributor.authorClemente Barreira, Juan Antonio
dc.contributor.authorMecha López, Hortensia
dc.contributor.authorVelazco, Raoul
dc.date.accessioned2023-06-17T13:18:22Z
dc.date.available2023-06-17T13:18:22Z
dc.date.issued2019-03-01
dc.description© 2018 IEEE This work was supported in part by the Spanish MINECO projects FPA2015-69210-C6-5-R and TIN2017-87237-P, and by the UCM mobility program for young professors.
dc.description.abstractAfter having carried out radiation experiments on memories, the detected bitflips must be classified into single bit upsets and multiple events to calculate the cross sections of different phenomena. There are some accepted procedures to determine if two bitflips are related. However, if there are enough bitflips, it is possible that unrelated pairs of errors appear in nearby cells and they are erroneously taken as a multiple event. In this paper, radiation experiments are studied as a special case of the urn-and-balls problem in probability theory to estimate how the measured multiple-event cross sections must be corrected to remove the overestimation due to the false events.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.departmentDepto. de Sistemas Informáticos y Computación
dc.description.facultyFac. de Ciencias Físicas
dc.description.facultyFac. de Informática
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Economía y Competitividad (MINECO)
dc.description.sponsorshipUniversidad Complutense de Madrid
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/50397
dc.identifier.doi10.1109/TDMR.2018.2886358
dc.identifier.issn1530-4388
dc.identifier.officialurlhttp://dx.doi.org/10.1109/TDMR.2018.2886358
dc.identifier.relatedurlhttps://ieeexplore.ieee.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/12942
dc.issue.number1
dc.journal.titleIEEE Transactions on device and materials reliability
dc.language.isoeng
dc.page.final111
dc.page.initial104
dc.publisherIEEE
dc.relation.projectID(FPA2015-69210-C6-5-R; TIN2017-87237-P)
dc.relation.projectIDUCM Mobility Program for Young Professors
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordBirthday statistics
dc.subject.keywordMultiple bit upset
dc.subject.keywordMultiple cell upset
dc.subject.keywordRadiation
dc.subject.keywordSingle bit upset
dc.subject.keywordSingle event upset
dc.subject.keywordSRAMs
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.ucmCircuitos integrados
dc.subject.unesco2202.03 Electricidad
dc.subject.unesco2203.07 Circuitos Integrados
dc.titleInfluence of Randomness during the Interpretation of Results from Single-Event Experiments on SRAMs
dc.typejournal article
dc.volume.number19
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