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Cathodoluminescence study of CdTe crystals doped with Bi and Bi : Yb

dc.contributor.authorHidalgo Alcalde, Pedro
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorSochinskii, N. V.
dc.contributor.authorAbellá, M.
dc.contributor.authorSaucedo, E.
dc.contributor.authorDieguez, E.
dc.date.accessioned2023-06-20T10:42:34Z
dc.date.available2023-06-20T10:42:34Z
dc.date.issued2008-08
dc.description© Springer Science+Business Media, LLC 2008. This work was supported by Projects CAM (S-0505/MAT/0279) and MEC (project MAT 2006/1259).
dc.description.abstractBi doped and Bi and Yb codoped CdTe crystals grown by the Bridgman method have been characterized by cathodoluminescence (CL) in the scanning electron microscope. CL images show a dense network of highly decorated grain boundaries in the Bi doped samples and dopant striations in the codoped crystals, attributed to the presence of Yb. Bi contributes to the appearance of the A luminescence band at 1.43 eV. The influence of Yb dopant on the CL spectra is discussed.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipCAM
dc.description.sponsorshipMEC
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/25522
dc.identifier.doi10.1007/s10853-008-2815-7
dc.identifier.issn0022-2461
dc.identifier.officialurlhttp://dx.doi.org/10.1007/s10853-008-2815-7
dc.identifier.relatedurlhttp://link.springer.com
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51047
dc.issue.number16
dc.journal.titleJournal of Materials Science
dc.language.isoeng
dc.page.final5308
dc.page.initial5305
dc.publisherSpringer
dc.relation.projectIDS-0505/MAT/0279
dc.relation.projectIDMAT 2006/1259
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordDefects
dc.subject.keywordGaas
dc.subject.keywordGe
dc.subject.ucmFísica de materiales
dc.titleCathodoluminescence study of CdTe crystals doped with Bi and Bi : Yb
dc.typejournal article
dc.volume.number43
dcterms.references1. Saucedo E, Fornaro L, Sochinskii NV, Cuña A, Corregidos V, Granados D, Die´guez E (2004) IEEE Trans Nucl Sci 51(6):3105 2. Neretina S, Sochinskii NV, Mascher P, Saucedo E (2005) Mater Res Soc Symp Proc 864:E4.18.1 3. Saucedo E, Herrero CM, Fornaro L, Sochinskii NV, Diéguez E (2005) J Cryst Growth 275(1–2):471 4. Saucedo E, Martínez O, Ruiz CM, Vigil-Galán O, Benito I, Fornaro L, Sochinskii NV, Diéguez E (2006) J Cryst Growth 291(2):416 5. Neretina S, Botton GA, Preston JS, Mascher P (2006) Appl Phys Lett 89:133101 6. Neretina S, Hughes RA, Britten JF, Sochinskii NV, Preston JS, Mascher P (2007) Nanotechnology 18:275301 7. Saucedo E, Ruiz CM, Bermúdez V, Die´guez E, Gombia E, Zappettini A, Baraldi A, Sochinskii NV (2006) J Appl Phys 100(10):104901 8. Pal U, Fernández P, Piqueras J, Sochinskii NV, Diéguez E (1995) J Appl Phys 78(3):1992 9. Fernández P, Piqueras J, Sochinskii NV, Muñooz V, Bernardi S (1997) Appl Phys Lett 71(21):3096 10. Franc J, Horodysky P, Grill R, Kubat J, Saucedo E, Sochinskii NV (2006) J Cryst Growth 286:384 11. Castaldini A, Cavallini A, Fraboni B, Fernández P, Piqueras J (1998) J Appl Phys 83:2121 12. Sobiesierski Z, Dharmadasa IM, Williams RH (1988) Appl Phys Lett 53:2623 13. Davis CB, Allred DD, Reyes-Mena A, González-Hernández J,González O, Hess BC, Allred WP (1993) Phys Rev B 47:13369 14. Castaldini A, Cavallini A, Fraboni B, Polenta L, Fernández P, Piqueras J (1996) Phys Rev B 54:7622 15. Stadler W, Hofmann DM, Alt HC, Muschik T, Meyer BK, Weigel E, Múller-Vogt G, Salk M, Rupp E, Benz WK (1995) Phys Rev B 51:10619 16. Shaw DA, Thornton RP (1968) J Mat Sci 3:507 17. Ono H, Kamejima T, Watanabe H, Matsui J (1986) Jpn J Appl Phys 25:L130
dspace.entity.typePublication
relation.isAuthorOfPublicationc834e5a4-3450-4ff7-8ca1-663a43f050bb
relation.isAuthorOfPublication68dabfe9-5aec-4207-bf8a-0851f2e37e2c
relation.isAuthorOfPublication.latestForDiscoveryc834e5a4-3450-4ff7-8ca1-663a43f050bb

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