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Single event effects on digital integrated circuits: origins and mitigation techniques

dc.book.title2007 IEEE International Symposium on Industrial Electronics
dc.conference.date04/06/2007-07/06/2007
dc.conference.placeVigo (Spain)
dc.conference.titleIndustrial Electronics, 2007. ISIE 2007. IEEE International Symposium on
dc.contributor.authorVelazco, Raoul
dc.contributor.authorFranco Peláez, Francisco Javier
dc.date.accessioned2023-06-20T13:41:19Z
dc.date.available2023-06-20T13:41:19Z
dc.date.issued2007-06-02
dc.description© 2007 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. IEEE International Symposium on Industrial Electronics (2007. Vigo)
dc.description.abstractNew generation electronic devices have become more and more sensitive to the effects of the natural radiation coming from the surrounding environment. These radiation sources are cosmic rays and radioactive impurities, able to corrupt the content of memory cells or to induce transient pulses in combinational logic. The growing sensitivity seems to be related to two main factors: the lower and lower charge needed to define the logic levels in advanced devices and the increasing number of basic components inside the modern integrated circuits. In this paper, are described state-of-art techniques to mitigate these effects as well as typical tests to verify the radiation-tolerance of the devices and/or systems.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/28903
dc.identifier.doi10.1109/ISIE.2007.4375148
dc.identifier.isbn978-1-4244-0755-2 (E-ISBN) ; 978-1-4244-0754-5 (Print ISBN)
dc.identifier.officialurlhttp://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=4375148
dc.identifier.urihttps://hdl.handle.net/20.500.14352/53389
dc.language.isoeng
dc.page.final3327
dc.page.initial3322
dc.page.total6
dc.publication.placePiscataway
dc.publisherIEEE
dc.rights.accessRightsopen access
dc.subject.cdu537.8
dc.subject.keywordDigital integrated circuits
dc.subject.keywordRadiation hardening (electronics)
dc.subject.keywordCombinational logic
dc.subject.keywordCosmic rays
dc.subject.keywordElectronic devices
dc.subject.keywordInduce transient pulses
dc.subject.keywordMemory cells
dc.subject.keywordRadiation sources
dc.subject.keywordRadioactive impurities
dc.subject.keywordSingle event effects
dc.subject.keywordCircuit testing
dc.subject.keywordFailure analysis
dc.subject.keywordImpurities
dc.subject.keywordLaboratories
dc.subject.keywordLogic circuits
dc.subject.keywordLogic devices
dc.subject.keywordSingle event upset
dc.subject.keywordSystem testing
dc.subject.ucmElectrónica (Física)
dc.subject.ucmRadiactividad
dc.titleSingle event effects on digital integrated circuits: origins and mitigation techniques
dc.typebook part
dspace.entity.typePublication
relation.isAuthorOfPublication662ba05f-c2fc-4ad7-9203-36924c80791a
relation.isAuthorOfPublication.latestForDiscovery662ba05f-c2fc-4ad7-9203-36924c80791a

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