Study of defects in implanted GaAs - te by cathodoluminescence
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Cavallini, A. | |
| dc.contributor.author | Fraboni, B. | |
| dc.date.accessioned | 2023-06-20T18:56:34Z | |
| dc.date.available | 2023-06-20T18:56:34Z | |
| dc.date.issued | 1994-05 | |
| dc.description | © Elsevier Science SA Lausanne. International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 93) - A NATO Advanced Research Workshop (3. 1993. Bolonia, Italia) | |
| dc.description.abstract | Evidence for IR cathodoluminescence (CL) at 1.2 and 1.0 eV in Te-doped GaAs in the temperature range 80-300 K has been obtained. The evolution of CL intensity and half-width of emission bands after silicon implantation and annealing has been investigated. The increase in the CL intensity with implantation dose after heat treatment supports the association of Si and/or Te with the radiation-induced Ga vacancies to form Si(Ga) or Te(Ga) defects. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24925 | |
| dc.identifier.doi | 10.1016/0921-5107(94)90315-8 | |
| dc.identifier.issn | 0921-5107 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1016/0921-5107(94)90315-8 | |
| dc.identifier.relatedurl | http://www.sciencedirect.com | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/58969 | |
| dc.issue.number | 1-mar | |
| dc.journal.title | Materials Science and Engineering B-Solid State Materials for Advanced Technology | |
| dc.page.final | 140 | |
| dc.page.initial | 138 | |
| dc.publisher | Elsevier Science SA Lausanne | |
| dc.rights.accessRights | metadata only access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Materials Science | |
| dc.subject.keyword | Multidisciplinary | |
| dc.subject.keyword | Physics | |
| dc.subject.keyword | Condensed Matter | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Study of defects in implanted GaAs - te by cathodoluminescence | |
| dc.type | journal article | |
| dc.volume.number | 24 | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 465cfd5b-6dd4-4a48-a6e3-160df06f7046 | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | 465cfd5b-6dd4-4a48-a6e3-160df06f7046 |