Study of defects in GaN films by cross-sectional cathodoluminescence
| dc.contributor.author | Zaldivar, M.H. | |
| dc.contributor.author | Fernández Sánchez, Paloma | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.date.accessioned | 2023-06-20T19:02:12Z | |
| dc.date.available | 2023-06-20T19:02:12Z | |
| dc.date.issued | 1998-03-01 | |
| dc.description | © 1998 American Institute of Physics. This work was supported by DGICYT (Project PB-1256). M.H.Z. thans AECI and CoNaCyt for a research grant. | |
| dc.description.abstract | Cathodoluminescence (CL) in the scanning electron microscope has been used to study cross-sectional samples on GaN epitaxial films grown on sapphire. Increased CL emission, attributed to the presence of stacking faults and decorated dislocations, is observed in a region of the buffer layer close to the film-substrate interface, In the epilayers also a region of enhanced emission is observed which is partially caused by Si doping and in which structural defects are involved. Cross-sectional CL appears as a useful method to reveal features of the spatial distribution of luminescence, not detectable by plan-view measurements. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | DGICYT | |
| dc.description.sponsorship | AECI | |
| dc.description.sponsorship | CoNaCyT | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/26378 | |
| dc.identifier.doi | 10.1063/1.366634 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.366634 | |
| dc.identifier.relatedurl | http://scitation.aip.org/ | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59145 | |
| dc.issue.number | 5 | |
| dc.journal.title | Journal of Applied Physics | |
| dc.language.iso | eng | |
| dc.page.final | 2799 | |
| dc.page.initial | 2796 | |
| dc.publisher | American Institute of Physics | |
| dc.relation.projectID | PB-93-1256 | |
| dc.rights.accessRights | restricted access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Study of defects in GaN films by cross-sectional cathodoluminescence | |
| dc.type | journal article | |
| dc.volume.number | 83 | |
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| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | daf4b879-c4a8-4121-aaff-e6ba47195545 | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | daf4b879-c4a8-4121-aaff-e6ba47195545 |
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