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Optoelectronic properties of GaP:Ti photovoltaic devices

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dc.contributor.authorOlea Ariza, Javier
dc.contributor.authorGonzalo, J.
dc.contributor.authorSiegel, B.
dc.contributor.authorBraña, A. F.
dc.contributor.authorGodoy Pérez, G.
dc.contributor.authorBenítez Fernández, R.
dc.contributor.authorCaudevilla Gutiérrez, Daniel
dc.contributor.authorAlgaidy, Sari
dc.contributor.authorPérez Zenteno, Francisco José
dc.contributor.authorDuarte Cano, Sebastián
dc.contributor.authorPrado Millán, Álvaro Del
dc.contributor.authorGarcía Hemme, Eric
dc.contributor.authorGarcía Hernansanz, Rodrigo
dc.contributor.authorPastor Pastor, David
dc.contributor.authorSan Andrés Serrano, Enrique
dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorBenítez Fernández, Rafael
dc.date.accessioned2024-11-22T10:45:08Z
dc.date.available2024-11-22T10:45:08Z
dc.date.issued2024-12
dc.description.abstractSupersaturated GaP is of interest for the photovoltaic field since optical transitions at energies below the bandgap (2.26 eV) could enhance the overall device efficiency up to theoretically 60%. We have previously demonstrated that Ti supersaturated GaP can be obtained by means of ion implantation and pulsed-laser melting with high structural quality and measured its below-bandgap photoconductivity. In this work we report the first results of a GaP:Ti based photovoltaic device. We have fabricated and measured photovoltaic devices with a GaP:Ti absorber layer showing enhanced external quantum efficiency at wavelengths above 550 nm. Also, we have measured the absorption coefficient (around 104 cm−1) and refractive index of this absorber layer. Finally, current-voltage curves in darkness were measured and analyzed using a two-diodes model, showing improvable characteristics. Ideas to enhance the properties of the devices are suggested.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipComunidad de Madrid
dc.description.sponsorshipEuropean Commission
dc.description.sponsorshipAgencia Española de Investigación
dc.description.sponsorshipMinisterio de Ciencia, Innovación y Universidades (España)
dc.description.sponsorshipConsejo Nacional de Humanidades, Ciencias y Tecnologías (México)
dc.description.sponsorshipUniversidad Complutense de Madrid
dc.description.sponsorshipMinistry of Education (Saudi Arabia)
dc.description.sponsorshipMinisterio de Trabajo y Economía Social. (España)
dc.description.statuspub
dc.identifier.citationOlea, J., Gonzalo, J., Siegel, J., Braña, A. F., Godoy-Pérez, G., Benítez-Fernández, R., Caudevilla, D., Algaidy, S., Pérez-Zenteno, F., Duarte-Cano, S., Prado, A. D., García-Hemme, E., García-Hernansanz, R., Pastor, D., San-Andrés, E., & Mártil, I. (2024). Optoelectronic properties of GaP:Ti photovoltaic devices. Materials Today Sustainability, 28, 101008. https://doi.org/10.1016/j.mtsust.2024.101008
dc.identifier.doi10.1016/j.mtsust.2024.101008
dc.identifier.essn2589-2347
dc.identifier.officialurlhttps://doi.org/10.1016/j.mtsust.2024.101008
dc.identifier.relatedurlhttps://www.sciencedirect.com/science/article/pii/S2589234724003440
dc.identifier.urihttps://hdl.handle.net/20.500.14352/110945
dc.journal.titleMaterials Today Sustainability
dc.language.isoeng
dc.page.final101008-6
dc.page.initial101008-1
dc.publisherElsevier
dc.relation.projectIDP2018/EMT-4308
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/TEC2017-84378-R/ES/FOTODETECTORES PARA INFRARROJO CERCANO Y MEDIO BASADOS EN SEMICONDUCTORES HIPERDOPADOS COMPATIBLES CON TECNOLOGIA CMOS/
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-116508RB-I00/ES/CONTACTOS SELECTIVOS EMERGENTES PARA CELULAS SOLARES DE SI SIN DOPADO FABRICADOS MEDIANTE PULVERIZACION DE ALTA PRESION/
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-117498RB-I00/ES/MEJORA DE LA RESPUESTA DE FOTODETECTORES DE IR BASADOS EN SEMICONDUCTORES DEL GRUPO IV HIPERDOPADOS/
dc.relation.projectIDTED2021-130894B–C21/C22
dc.relation.projectIDPID2021-123190OB-I00
dc.relation.projectIDPRE2018-083798
dc.relation.projectIDCT58/21-CT59/
dc.relation.projectIDCT19/23-INVM-35
dc.relation.projectIDCT19/23-INVM-27
dc.relation.projectIDTED2021- 129624B–C43
dc.rightsAttribution 4.0 Internationalen
dc.rights.accessRightsopen access
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subject.cdu537.533.3
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2203 Electrónica
dc.titleOptoelectronic properties of GaP:Ti photovoltaic devices
dc.typejournal article
dc.type.hasVersionVoR
dc.volume.number28
dspace.entity.typePublication
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