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Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators

dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorPrado Millán, Álvaro Del
dc.contributor.authorSan Andrés Serrano, Enrique
dc.date.accessioned2023-06-20T10:44:48Z
dc.date.available2023-06-20T10:44:48Z
dc.date.issued2003-07
dc.description© 2003 American Vacuum Society.
dc.description.abstractWe present a comparative study of the electrical and structural characteristics of metal-insulator-semiconductor (MIS) devices using SiN1.55:H or SiN1.55:H/SiOx stacks as gate dielectrics, with the aim of improving the thermal stability of the SiN1.55:H/Si interface. The dielectrics were grown on Si by the electron cyclotron resonance plasma method. The stacks were produced by plasma oxidation of the Si surface, resulting in a thin layer of SiOx (PO-SiOx), followed by deposition of the SiN1.55:H layer. Afterwards, the samples were rapid thermally annealed (RTA) at temperatures ranging from 300 to 1000degreesC. Some representative samples were studied by Fourier transform infrared spectroscopy to characterize the bonding structure of the SiN1.55:H/PO-SiOx stack and its evolution with the annealing temperature. The results were in good agreement with the well known model for suboxide evolution with the temperature: the formation of highly defective nanocrystalline Si clusters inside a high quality SiO2 matrix. This process takes place for RTA temperatures higher than 700degreesC. This model also explains the results derived from C-V measurements, which show improvement of the PO-SiOx/Si interface as a result of the formation of the high quality SiO2 matrix. Additionally, the thermal stability improved with respect to the SiN1.55:H/Si interface, which suffers significant degradation when annealed above 600degreesC, while devices made with the stacks are able to hold annealing temperatures up to 900degreesC. On the other hand, the formation of nc-Si results in degradation of the reliability of the MIS devices.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26138
dc.identifier.doi10.1116/1.1585067
dc.identifier.issn1071-1023
dc.identifier.officialurlhttp://dx.doi.org/10.1116/1.1585067
dc.identifier.relatedurlhttp://scitation.aip.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51133
dc.issue.number4
dc.journal.titleJournal of Vacuum Science & Technology B
dc.page.final1313
dc.page.initial1306
dc.publisherAVS Amer Inst. Physics
dc.rights.accessRightsmetadata only access
dc.subject.cdu537
dc.subject.keywordChemical-Vapor-Deposition
dc.subject.keywordSilicon-Nitride
dc.subject.keywordCyclotron-Resonance
dc.subject.keywordSurface Passivation
dc.subject.keywordCapacitance-Voltage
dc.subject.keywordOxide Films
dc.subject.keywordThin-Films
dc.subject.keywordH Films
dc.subject.keywordDielectrics
dc.subject.keywordDefects.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleRapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators
dc.typejournal article
dc.volume.number21
dspace.entity.typePublication
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relation.isAuthorOfPublication.latestForDiscoverya5ab602d-705f-4080-b4eb-53772168a203

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