Strain modulation of Si vacancy emission from SIC micro- and nanoparticles

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Vásquez Villanueva, Geraldo Cristian
Bathen, M.E.
Galeckas, A.
Bazioti, C.
Johansen, K. M
Prytz, O.
Moe, A.M.
Kuznetsov, A. Yu
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American Chemical Society
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Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting, and waveguiding. Specifically, emission from 6H-SiC micro- and nanoparticles ranging from 100 nm to 5 mu m in size is collected using cathodoluminescence (CL), and we monitor signals attributed to the Si vacancy (V_Si) as a function of its location. Clear shifts in the emission wavelength are found for emitters localized in the particle center and at the edges. By comparing spatial CL maps with strain analysis carried out in transmission electron microscopy, we attribute the emission shifts to compressive strain of 2-3% along the particle a-direction. Thus, embedding V_Si, qubit defects within SiC nanoparticles offers an interesting and versatile opportunity to tune single-photon emission energies while simultaneously ensuring ease of addressability via a self-assembled SiC nanoparticle matrix.
© 2020 American Chemical Society. Artículo firmado por más de diez autores. Financial support was kindly provided by the Research Council of Norway and the University of Oslo through the frontier research project FUNDAMeNT (no. 251131, FriPro ToppForsk-program). The Research Council of Norway is acknowledged for the support to the Norwegian Micro-and Nano-Fabrication Facility, NorFab, project number 245963, and the Norwegian Center for Transmission Electron Microscopy (NORTEM) (no. 197405/F50). D.M. and A.C. thank the MINECO/FEDER/M-ERA.Net Cofund projects RTI2018-097195-B-I00 and PCIN-2017-106