Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors

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dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorArtús, L.
dc.contributor.authorBlanco, N.
dc.contributor.authorCuscó, R.
dc.contributor.authorIbáñez, J.
dc.contributor.authorLong, A.R.
dc.contributor.authorRahman, M.
dc.date.accessioned2023-06-20T19:10:13Z
dc.date.available2023-06-20T19:10:13Z
dc.date.issued2000-12-01
dc.description© American Institute of Physics. The authors wish to acknowledge financial support from the Spanish Ministry of Science and Technology.
dc.description.abstractWe have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard-Mermin model.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipSpanish Ministry of Science and Technology
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/27441
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dc.identifier.doi10.1063/1.1322593
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.1322593
dc.identifier.relatedurlhttp://scitation.aip.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59343
dc.issue.number11
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.page.final6570
dc.page.initial6567
dc.publisherAmerican Institute of Physics
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordP-Type GaAs
dc.subject.keywordCarrier Concentration
dc.subject.keywordPlasmon Modes
dc.subject.keywordPhonon Modes
dc.subject.keywordInP
dc.subject.keywordSpectra.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleComparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
dc.typejournal article
dc.volume.number88
dspace.entity.typePublication
relation.isAuthorOfPublicationa5ab602d-705f-4080-b4eb-53772168a203
relation.isAuthorOfPublication.latestForDiscoverya5ab602d-705f-4080-b4eb-53772168a203
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