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Radiation effects on XFET voltage references

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dc.book.titleRadiation Effects Data Workshop, 2005. IEEE
dc.conference.date11/07/2005-15/07/2005
dc.conference.placeSeattle (USA)
dc.conference.titleRadiation Effects Data Workshop, 2005. IEEE
dc.contributor.authorFranco Peláez, Francisco Javier
dc.contributor.authorZong, Yi
dc.contributor.authorAgapito Serrano, Juan Andrés
dc.contributor.authorHernandez Cachero, Antonio
dc.date.accessioned2023-06-20T13:41:20Z
dc.date.available2023-06-20T13:41:20Z
dc.date.issued2005-07-11
dc.description© IEEE IEEE Radiation Effects Data Workshop (2005. Seattle, WA). This work was supported by the collaboration agreement K476/LHC between CERN and UCM, by the Spanish Research Agency CICYT (FPA2002-00912) and partially supported by ITN.
dc.description.abstractXFET references make up a new kind of voltage references different from the popular band-gap or buried Zener devices. These references are built by means of a reference cell consisting of a couple of p-channel junction field effect transistors with different pinch-off voltage values and an operational amplifier for the purpose of improving the output characteristics of the whole device. An irradiation in a mixed gamma and neutron environment was performed at the Portuguese Research Reactor for a complete characterization of the devices. Some of the parameters were measured during the irradiation while the rest of them were obtained once the samples were removed from the neutron facility. Experimental results show that some references belonging to this class are interesting candidates for a design of radiation-tolerant electronic systems based on COTS devices.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Educación y Ciencia
dc.description.sponsorshipCERN
dc.description.sponsorshipUniversidad Complutense de Madrid
dc.description.sponsorshipCICYT
dc.description.sponsorshipITN (Portugal)
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/28904
dc.identifier.doi10.1109/REDW.2005.1532680
dc.identifier.isbn0-7803-9367-8
dc.identifier.officialurlhttp://dx.doi.org/10.1109/REDW.2005.1532680
dc.identifier.relatedurlhttp://ieeexplore.ieee.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/53390
dc.language.isoeng
dc.page.final143
dc.page.initial138
dc.page.total6
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc
dc.relation.projectIDFPA2002-00912
dc.relation.projectIDK476/LHC
dc.rights.accessRightsopen access
dc.subject.cdu537.8
dc.subject.keywordJFET circuits
dc.subject.keywordGamma-ray effects
dc.subject.keywordNeutron effects
dc.subject.keywordOperational amplifiers
dc.subject.keywordReference circuits
dc.subject.keywordCOTS devices
dc.subject.keywordXFET voltage references
dc.subject.keywordgamma environment
dc.subject.keywordneutron environment
dc.subject.keywordoperational amplifiers
dc.subject.keywordp-channel junction field effect transistors
dc.subject.keywordradiation effects
dc.subject.keywordradiation-tolerant electronic systems
dc.subject.keywordreference cells
dc.subject.keywordFETs
dc.subject.keywordInductors
dc.subject.keywordInstruments
dc.subject.keywordNeutrons
dc.subject.keywordOutput feedback
dc.subject.keywordPhotonic band gap
dc.subject.keywordRadiation effects
dc.subject.keywordStability
dc.subject.keywordVoltage
dc.subject.ucmElectrónica (Física)
dc.subject.ucmRadiactividad
dc.titleRadiation effects on XFET voltage references
dc.typebook part
dcterms.references[1] P. R. Gray and R. G. Meyer, Analysis and Design Analog Integrated Circuits, John Wiley & Sons, 1993. [2] W. Jun, “References and Low Dropout Regulators”, Technical Article from Analog Devices. [3] B. G. Rax, C. I. Lee and A. H. Johnston, “Degradation of precision reference devices in space environments”, IEEE Transactions on Nuclear Science, Vol. 44, nº 6, pp. 1939-1944, December 1997. [4] J. F. Krieg, C. J. Norman, M. W. Savage, J. L. Titus, D. Emily, G. W. Dunham, N. Van Vonno and J. Swonger, “Comparison of total dose effects on a voltage reference fabricated on bonded-wafer and polysilicon dielectric isolation”, IEEE Transactions on Nuclear Science, Vol. 47, nº 6, pp. 2561-2567, December 2000. [5] C. I. Lee et A. H. Johnston, “Comparison of total dose response on high resolution analog-to-digital converter technologies”, IEEE Transactions on Nuclear Science, Vol. 45, nº 3, pp. 1444-1449, June 1998. [6] W. Abare, F. Brueggeman, R. Pease, J. Krieg and M. Simons, “Comparative analysis of low dose-rate, accelerated, and standard cobalt-60 radiation response data for a low-dropout voltage regulator and a voltage reference”, IEEE Radiation Effects Data Workshop, pp. 177-180, July 2002. [7] S. S. McClure, J. L. Gorelick, R. L. Pease, B. G. Rax and R. L. Ladbury, “Total dose performance of radiation hardened voltage regulators and references”, IEEE Radiation Effects Data Workshop, pp. 1-5, July 2001. [8] J. G. Marques, A. C. Fernandes, I. C. Gonçalves an A. H. Ramalho, “Test facility at the Portuguese Research Reactor for Irradiations with Fasts Neutrons”, Proceedings of the Workshop on Radiation Effects on Components and Systems, RADECS 2004, Madrid (Spain), September 2004, pp. 335-338. [9] J. G. Marques, head of Portuguese Research Reactor, private communication. [10] G. C. Messenger and M.S. Ash, The Effects of Radiation on Electronic Systems, 2nd Edition, Van Nostral Reinhold, NYC, 1992. [11] A. H. Johnston, “Hand analysis techniques for neutron degradation of operational amplifiers”, IEEE Transactions on Nuclear Science, Vol. 23, nº 6, pp. 1709-1714, December 1976. [12] P. C. Adell, R. D. Schrimpf, W. T. Holman, J. L. Todd, S. Caveriviere, R. R. Cizmarik and K. F. Galloway, “Total dose effects in a linear voltage regulator”, IEEE Transactions on Nuclear Science, Vol. 51, nº 6, pp. 3816-3821, December 2004. [13] J. Boch F. Saigne, S. Ducret, R. D. Schrimpf, D. M. Fleetwood, P. Iacconi and L. Dusseau, “Total dose effects on bipolar integrated circuits: characterization of the saturation region”, IEEE Transactions on Nuclear Science, Vol. 51, nº 6, pp. 3225-3230, December 2004. [14] F. J. Franco, Y. Zong, J. Casas-Cubillos, M. A. Rodríguez-Ruiz and J. A. Agapito, “Neutron Effects on Short Circuit Currents of Bipolar Op Amps and Consequences”, Proceedings of the Workshop on Radiation Effects on Components and Systems, RADECS 2004, Madrid (Spain), September 2004, pp. 213-220. Also accepted for publication in the 2005 October issue of IEEE Transactions on Nuclear Science. [15] Erric database, http://erric.dasiac.com
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relation.isAuthorOfPublication.latestForDiscovery662ba05f-c2fc-4ad7-9203-36924c80791a

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