Study of the defect structure, compositional and electrical properties of Er_2O_3-doped n-type GaSb : Te crystals grown by the vertical Bridgman technique
| dc.contributor.author | Plaza, J. L. | |
| dc.contributor.author | Hidalgo Alcalde, Pedro | |
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Dieguez, E. | |
| dc.date.accessioned | 2023-06-20T18:55:21Z | |
| dc.date.available | 2023-06-20T18:55:21Z | |
| dc.date.issued | 2002-04-30 | |
| dc.description | © 2002 Elsevier Science B.V. International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (9. 2001. Ramini, Italia) | |
| dc.description.abstract | The defect structure of Te-doped GaSb samples co-doped with Er_2O_3 and grown by the vertical Bridgman technique has been analysed. This study was carried out for different Er and Te concentrations. The defect structure of the samples has been analysed by means of cathodoluminescence (CL), scanning electron microscopy (SEM) and wavelength dispersive X-ray microanalysis (WDX). The effect of the defect structure and sample composition on the electrical properties of the material has been established taking into account the results obtained by means of the van der Pauw technique. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24447 | |
| dc.identifier.doi | 10.1016/S0921-5107(01)01065-0 | |
| dc.identifier.issn | 0921-5107 | |
| dc.identifier.officialurl | http://www.sciencedirect.com/science/article/pii/S0921510701010650 | |
| dc.identifier.relatedurl | http://www.sciencedirect.com | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/58931 | |
| dc.journal.title | Materials Science and Engineering B-Solid State Materials for Advanced Technology | |
| dc.language.iso | eng | |
| dc.page.final | 533 | |
| dc.page.initial | 529 | |
| dc.publisher | Elsevier Science Sa | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Study of the defect structure, compositional and electrical properties of Er_2O_3-doped n-type GaSb : Te crystals grown by the vertical Bridgman technique | |
| dc.type | journal article | |
| dc.volume.number | 91-92 | |
| dcterms.references | [1] W.H. Haydl, H.D. Müller, H. Ennen, W. Korber, K.W. Benz, Appl. Phys. Lett. 46 (9) (1985) 870. [2] L. Smentek, Phys. Rep. 297 (1998) 155. [3] A.G. Milnes, A.Y. Polyakov, Sol. Stat. Electron 36 (1993) 803. [4] O. Hildebrand, W. Kuebart, K.W. Benz, M.H. Pilkuhn, IEEE J. Quatum Electron QE-17 (1981) 284. [5] L.M. Frass, G.R. Girard, J.E. Avery, B.A. Arau, V.S. Sundaram, A.G. Thompson, J.M. Gee, J. Appl. Phys. 66 (1989) 3866. [6] G. Motosugi, T. Kagawa, Jpn. J. Appl. Phys. 19 (1980) 2303. [7] J.M. Zavada, D. Zhang, Sol. Stat. Electron 387 (1995) 1285. [8] P. Hidalgo, B. Mendez, J. Piqueras, J.L. Plaza, E. Dieguez, Semicond. Sci. Technol. 13 (1998) 1431. [9] P.S. Dutta, B. Mendez, J. Piqueras, E. Dieguez, H.L. Bhat, J. Appl. Phys. 80 (1996) 1112. [10] J.L. Plaza, Ph.D Thesis, Universidad Autonoma of Madrid (2001). | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | c834e5a4-3450-4ff7-8ca1-663a43f050bb | |
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| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | c834e5a4-3450-4ff7-8ca1-663a43f050bb |
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