Structural, electrical, and optical properties of CuGaSe2 rf sputtered thin films
| dc.contributor.author | Martil De La Plaza, Ignacio | |
| dc.contributor.author | González Díaz, Germán | |
| dc.contributor.author | Sánchez Quesada, Francisco | |
| dc.contributor.author | Santamaría Sánchez-Barriga, Jacobo | |
| dc.date.accessioned | 2023-06-20T19:08:57Z | |
| dc.date.available | 2023-06-20T19:08:57Z | |
| dc.date.issued | 1990-06-01 | |
| dc.description | © American Institute of Physcis. The authors would like to express their acknowledgment to J. Carabe (Instituto de Energías Renovables, C.I.E.M.A.T.) for optical measurements facilities and J.M. Gómez de Salazar (Departamento de Metalurgia, U.C.M.) for S.E.M. observations and EDAX analysis. This work was partially supported by the U.S.-Spain Joint Committee for Science and Technology under Grant No. CCA-84111046. | |
| dc.description.abstract | Thin films of CuGaSe2 have been produced by rf sputtering. Compositional, structural, electrical, and optical properties are strongly influenced by growthtemperature. At substrate temperatures lower than 300 °C amorphous or poorly crystalline Se‐excess films are obtained, showing high resistivity (≊103 Ω cm) and optical transitions at 1.62, 1.80, and 2.4 eV (values lower than the single‐crystal counterparts). At the higher growthtemperatures,polycrystalline films are obtained (average grain size 0.7 μm) with lower values of resistivity (1 Ω cm), and optical transitions at 1.68, 1.90, and 2.55 eV (very close to the single‐crystal values). A hopping conduction mechanism has been detected at the lower measuringtemperature (T<150 K), and a grain boundary limited conduction process at the higher measurementstemperature (T>150 K). Structural and compositional characteristics are used to explain the behavior observed in the electrical and optical properties. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | U.S.-Spain Joint Committee for Science and Technology | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/27150 | |
| dc.identifier.doi | 10.1063/1.347113 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.347113 | |
| dc.identifier.relatedurl | http://scitation.aip.org/ | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59314 | |
| dc.issue.number | 1 | |
| dc.journal.title | Journal of Applied Physics | |
| dc.language.iso | eng | |
| dc.page.final | 194 | |
| dc.page.initial | 189 | |
| dc.publisher | American Institute of Physics | |
| dc.relation.projectID | CCA-84111046 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Physics | |
| dc.subject.keyword | Applied. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Structural, electrical, and optical properties of CuGaSe2 rf sputtered thin films | |
| dc.type | journal article | |
| dc.volume.number | 68 | |
| dcterms.references | 1) W.H. Bloss, J. Kimmerle, F. Pfisterer and H.W. Schock, in Proceedings of the 17th IEEE Photovoltaic Specialists Conference, Kissimmee, FL, 1984 (IEEE, New York, 1984), p. 715. 2) K.R. Murali, B.S.V. Gopalam and J. Sobhandri, J. Mater. Sci. Lett., 5, 421 (1986). 3) R. Noufi, R. Powell, C. Herrington and T. Coutts, Solar Cells, 17, 303 (1986). 4) J.L. Annapurna and K.V. Reddy, Indian J. Pure Appl. Phys., 24, 283 (1986). 5) Y.K. Kapur, B.M. Basol and E.S. Tseng, in Proceedings of the 18th IEEE Photovoltaic Specialists Conference, Las Vegas, NV, 1985 (IEEE, New York, 1986), p. 1429. 6) W. Arnat, B. Dimmler, H. Dirttrich, J. Kimerle, R. Menner, F. Pfisterer and H.W. Schock, in Proceedings of the 18th IEEE Photovoltaix Specialists Conference, Las Vegasa, NV, Octuber 1985 (IEEE, New York, 1986. 7) W. Horig, H. Neumann, B. Schumann and G. Kuhn, Phys. Status Solidi B, 85, K57 (1978). 8) I. Mártil, G. González-Díaz, J. Santamaría, M.L. Lucía, J.L. Hernández-Rojas and F. Sánchez-Quesada, J. Mater. Sci. Lett., (in press). 9) I. Mártil, G. González-Díaz and F. Sánchez-Quesada, Thin Solid Films, 114, 327 (1984). 10) I. Mártil, G. González-Díaz and F. Sánchez-Quesada, Solar Energy Mater., 12, 345 (1985). 11) ASTM Cards Numbers: 31-456 and 29-628. 12) W. Arndt, H. Dittrich and H.W. Schock, Thin Solid Films, 130, 209 (1985). 13) J.Y.W. Seto, J. Appl. Phys., 46, 5247 (1975). 14) J.W. Orton and H.J. Powell, Rep. Prog. Phys., 43, 1263 (1980). 15) G. Masse, J. Phys. Chem. Solids, 45, 1091 (1984). 16) L. Mandel, Solid State Commum., 32, 201 (1979). 17) M.H. Brodsky, ed., Amorphous Semiconductors, Vol. 36 of Topics in Applied Physics (Springer, Berlin, 1979). 18) J.J. Hauser, Phys. Rev. Lett., 29, 476 (1979). 19) R.P. Sharma, A.K. Shukla, A.K. Kapoor, R. Srivastava and P.C. Mathur, J. Appl. Phys., 57, 2026 (1985). 20) G.D. Boyd, H.M. Kasper, J.H. McFee and F.G. Storz, IEEE J. Quantum Electron., QE-8, 900 (1972). 21) I. Mártil, G. González-Díaz, F. Sánchez-Quesada and M. Rodríguez-Vidal, Thin Solid Films, 120, 31 (1984). 22) J.L. Shay, B. Tell, H.M. Kasper and L.M. Schiavone, Phys. Rev. B, 5, 5003 (1972). 23) J. Tuttle, D. Albin, J. Goral, C. Kennedy and R. Noufi, Solar Cells, 24, 67 (1988). 24) D. Albin, R. Noufi, J. Tuttle, J. Goral and S.H. Risbud, J. Appl. Phys., 64, 4103 (1988). 25) J. Santamaría, I. Mártil, E. Iborra, G. González-Díaz and F. Sánchez-Quesada, J. Vac. Sci. Technol. A, 7, 1424 (1989). | |
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