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All manganite tunnel junctions with interface induced barrier magnetism

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https://doi.org/10.1002/adma.201002067

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Publication date

2010

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Wiley
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https://hdl.handle.net/20.500.14352/99773

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Sefrioui, Z., et al. «All‐Manganite Tunnel Junctions with Interface‐Induced Barrier Magnetism». Advanced Materials, vol. 22, n.o 44, noviembre de 2010, pp. 5029-34. DOI.org (Crossref), https://doi.org/10.1002/adma.201002067.

Abstract

In epitaxial heterostructures combining strongly correlated manganese oxides with antiferromagnetic-insulator or half-metallic character, a large interfacial moment is found and used to produce a spin-filter-like behavior in all-manganite tunnel junctions. The results suggest that after playing a key role in exchange-bias for spin-valves, uncompensated moments at engineered antiferromagnetic interfaces represent a novel route for generating highly spin-polarized currents with antiferromagnets.

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Artículo firmado por 18 autores

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Física del estado sólido, Física de materiales

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2211.14 Interfases, 2211.17 Propiedades Magnéticas

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