Cathodoluminescence from nanocrystalline silicon films and porous silicon
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Plugaru, R. | |
| dc.contributor.author | Craciun, G. | |
| dc.contributor.author | García, J. A. | |
| dc.contributor.author | Remon, A. | |
| dc.date.accessioned | 2023-06-20T18:55:48Z | |
| dc.date.available | 2023-06-20T18:55:48Z | |
| dc.date.issued | 1999-03 | |
| dc.description | © Springer. This work was supported by NATO (Grant HTECH. CRG 961392) and DGES (Project PB96-0639). | |
| dc.description.abstract | Luminescence emission of nanocrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show a dominant band at 400 nm as well as a band centered at about 650 nm. CL spectra of porous silicon samples also show emission at 400 nm. Spectral changes induced by annealing and implantation treatments of the films suggest that the presence of nanocrystals is the origin of the observed CL. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | NATO | |
| dc.description.sponsorship | DGES | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24678 | |
| dc.identifier.doi | 10.1007/s003390050897 | |
| dc.identifier.issn | 0947-8396 | |
| dc.identifier.officialurl | http://link.springer.com/article/10.1007%2Fs003390050897?LI=true# | |
| dc.identifier.relatedurl | http://link.springer.com | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/58945 | |
| dc.issue.number | 3 | |
| dc.journal.title | Applied physics A-Materials Science&Processing | |
| dc.language.iso | eng | |
| dc.page.final | 331 | |
| dc.page.initial | 329 | |
| dc.publisher | Springer | |
| dc.relation.projectID | HTECH | |
| dc.relation.projectID | CRG 961392 | |
| dc.relation.projectID | PB96-0639 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Luminescence Properties | |
| dc.subject.keyword | Photoluminescence | |
| dc.subject.keyword | Emission | |
| dc.subject.keyword | Si | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Cathodoluminescence from nanocrystalline silicon films and porous silicon | |
| dc.type | journal article | |
| dc.volume.number | 68 | |
| dcterms.references | 1. A.G. Cullis, L.T. Canham, P.D.J. Calcott: J. Appl. Phys. 82, 909 (1997) 2. A.G. Cullis, L.T. Canham, G.M. Williams, P.W. Smith, O.D. Doser: J. Appl. Phys. 75, 493 (1994) 3. T. Suzuki, T. Sakai, L. Zhang, Y. Nishiyama: Appl. Phys. Lett. 66, 215 (1995) 4. T. Mitsui, N. Yamamoto, K. Takemoto, O. Nittono: Jpn. J. Appl. Phys. 33, L342 (1994) 5. L. Tsybeskov, Ju.V. Vandyshev, P.M. Fauchet: Phys. Rev. B 49, 7821 (1994) 6. G.G. Qin, X.S. Liu, S.Y. Ma, J. Lin, G.Q. Yao, X.Y. Lin, K.X. Lin: Phys. Rev. B 55, 12 876 (1997) 7. H. Mimura, T. Futagi, T. Matsumoto, T. Nakamura, Y. Kanemitsu: Jpn. J. Appl. Phys. 33, 586 (1994) 8. X. Zhao, O. Schoenfeld, J. Kusano, Y. Aoyagi, T. Sugano: Jpn. J. Appl. Phys. 33, L649 (1994) 9. Y. Kanemitsu: Phys. Rev. B 49, 16 845 (1994) 10. G. Harbeke, L. Krausbauer, E.F. Steigmeier, A.E.Widmer, H.F. Kappert, G. Neugebauer: J. Electrochem. Soc. 120, 675 (1984) 11. A.T. Voutas, M.K. Hatalis: J. Electrochem. Soc. 140, 282 (1993) 12. E. Edelberg, S. Bergh, R. Naone, M. Hall, E.S. Aydil: J. Appl. Phys. 81, 2410 (1997) | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication | 465cfd5b-6dd4-4a48-a6e3-160df06f7046 | |
| relation.isAuthorOfPublication.latestForDiscovery | 465cfd5b-6dd4-4a48-a6e3-160df06f7046 |
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