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High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs

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dc.contributor.authorAlgaidy, Sari
dc.contributor.authorCaudevilla Gutiérrez, David
dc.contributor.authorPérez Zenteno, Francisco José
dc.contributor.authorGarcía Hernansanz, Rodrigo
dc.contributor.authorGarcía Hemme, Eric
dc.contributor.authorOlea Ariza, Javier
dc.contributor.authorSan Andrés Serrano, Enrique
dc.contributor.authorDuarte Cano, Sebastián
dc.contributor.authorSiegel, J.
dc.contributor.authorGonzalo, J.
dc.contributor.authorPastor Pastor, David
dc.contributor.authorPrado Millán, Álvaro Del
dc.date.accessioned2023-06-22T12:28:14Z
dc.date.available2023-06-22T12:28:14Z
dc.date.issued2023-10-31
dc.descriptionCRUE-CSIC (Acuerdos Transformativos 2022) "Authors would like to acknowledge C.A.I. de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation, and the technical. This work was partially supported by the Project MADRIDPV2 (Grant No. P20138/EMT-4308) funded by the Comunidad Autónoma de Madrid with the support of FEDER funds, by the Spanish MINECO (Ministerio de Economía y Competitividad) under grants PID2020-116508RB-100, PID2020-117498RB-I00 and RTI2018-096498-B-I00. One of the authors (S. Algaidy) would also like to acknowledge financial support from Ministry of Education in the Kingdom of Saudi Arabia. D.Caudevilla would also like to acknowledge a grant (PRE2018-083798), financed by MICINN and European Social Fund. F. Perez-Zenteno would like to acknowledge financial support Mexico grant program CONACyT under grant 786327. The authors would like to also acknowledge the services of CAI de Espectroscopia of UCM, (INA-LMA) de Universidad de Zaragoza and C.A.C.T.I de Universidad de Vigo for Raman, FIB-SEM and SIMS, respectively."en
dc.description.abstractWe present a detailed investigation on the formation of supersaturated GaAs using Ti+ implantation followed by nanosecond Pulsed Laser Melting (PLM). We have synthesized high-crystal quality supersaturated GaAs layers with concentrations of Ti above the insulator to metal transition (Mott limit). The Ti-implanted concentration depth profiles after PLM obtained by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS) show a redistribution of Ti impurities within the first hundred nanometers and superficial concentration up to 1 × 1021 redistrcm-3. Raman spectroscopy of these Ti supersaturated, and regrown GaAs samples shows a sharp crystalline peak and tensile strain due to the Ti lattice incorporation. Scanning Transmission Electron Microscopy (STEM) and high-resolution Transmission Electron Microscopy (TEM) images show a good GaAs crystallinity after the PLM process. Energy-Dispersive X-ray Spectroscopy (EDS) reveals an enhanced Ti signal inside bubble-like structures and an appearance of interface oxide layer with all processed samples.en
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Ciencia, Innovación y Universidades (España)
dc.description.sponsorshipComunidad de Madrid
dc.description.sponsorshipMinisterio de Economía, Comercio y Empresa (España)
dc.description.sponsorshipMinistry of Education (Arabia Saudita)
dc.description.sponsorshipEuropean Commission
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/75393
dc.identifier.citationS. Algaidy, D. Caudevilla, F. Perez-Zenteno, R. García-Hernansanz, E. García-Hemme, J. Olea, E. San Andrés, S. Duarte-Cano, J. Siegel, J. Gonzalo, D. Pastor, and A. Del Prado, Materials Science in Semiconductor Processing 153, 107191 (2023).
dc.identifier.doi10.1016/j.mssp.2022.107191
dc.identifier.issn1369-8001
dc.identifier.officialurlhttps://doi.org/10.1016/j.mssp.2022.107191
dc.identifier.urihttps://hdl.handle.net/20.500.14352/72593
dc.journal.titleMaterials Science in Semiconductor Processing
dc.language.isoeng
dc.page.initial107191
dc.publisherElsevier Science Ltd
dc.relation.projectIDPID2020-116508RB-I00; PID2020-117498RB-I00; RTI2018- 096498-B-I00
dc.relation.projectIDMADRID-PV2 (P20138/EMT-4308)
dc.relation.projectIDPRE2018-083798
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España
dc.rights.accessRightsopen access
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject.cdu537
dc.subject.keywordGallium compounds
dc.subject.keywordIon implantation
dc.subject.keywordPulsed laser melting
dc.subject.keywordSupersaturated material
dc.subject.keywordTitanium
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleHigh-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAsen
dc.typejournal article
dc.volume.number153
dspace.entity.typePublication
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relation.isAuthorOfPublication.latestForDiscovery838d6660-e248-42ad-b8b2-0599f3a4542b

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