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Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions

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dc.contributor.authorBruno, Flavio Yair
dc.contributor.authorGarcia Barriocanal, Javier
dc.contributor.authorTorija, M.
dc.contributor.authorRivera Calzada, Alberto Carlos
dc.contributor.authorSefrioui, Zouhair
dc.contributor.authorLeighton, C.
dc.contributor.authorLeón Yebra, Carlos
dc.contributor.authorSantamaría Sánchez-Barriga, Jacobo
dc.date.accessioned2023-06-20T10:53:47Z
dc.date.available2023-06-20T10:53:47Z
dc.date.issued2008-02-25
dc.description© 2008 American Institute of Physics. The work at UCM was supported by MEC MAT 2005—06024 C02 and work at UMN was supported by NSF DMR.
dc.description.abstractElectrical transport properties of heteroepitaxial p-n junctions made of La_(0.8)Sr_(0.2)CoO_(3) and SrTi_(0.99)Nb_(0.01)O_(3) were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20–300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMEC
dc.description.sponsorshipNSF DMR
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/30541
dc.identifier.doi10.1063/1.2887905
dc.identifier.issn0003-6951
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.2887905
dc.identifier.relatedurlhttp://scitation.aip.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51411
dc.issue.number8
dc.journal.titleApplied physics letters
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.projectIDMAT 2005-06024 C02
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordPhysics
dc.subject.keywordApplied.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleEffects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions
dc.typejournal article
dc.volume.number92
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