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Cathodoluminescence and photoluminescence in the core region of Bi_12GeO_20 and Bi_12SiO_20 crystals

dc.contributor.authorCremades Rodríguez, Ana Isabel
dc.contributor.authorSantos, M. T.
dc.contributor.authorRemon, A.
dc.contributor.authorGarcía, J. A.
dc.contributor.authorDieguez, E.
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.date.accessioned2023-06-20T18:53:16Z
dc.date.available2023-06-20T18:53:16Z
dc.date.issued1996-05-01
dc.description© 1996 American Institute of Physics. This work has been supported by CICYT (Project No. ESP95-0148) and DGICYT (Project No. PB93-1256).
dc.description.abstractCathodoluminescence and photoluminescence of Bi_12SiO_20 and Bi_12GeO_20 samples are studied. Both kinds of samples show a dark orange central part or core. Emissions in the blue, green, and red spectral regions are observed. The 640 nm band is the predominant feature in the core emission. The evolution of this band during electron irradiation suggests possible emission mechanisms. In addition, two infrared emissions at about 915 and 1390 nm are detected.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipCICYT
dc.description.sponsorshipDGICYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/23627
dc.identifier.doi10.1063/1.361434
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.361434
dc.identifier.relatedurlhttp://scitation.aip.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58862
dc.issue.number9
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.page.final7190
dc.page.initial7186
dc.publisherAmerican Institute of Physics
dc.relation.projectIDESP95-0148
dc.relation.projectIDPB93-1256
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordLuminescence
dc.subject.keywordBi_14Ge_3O_12
dc.subject.ucmFísica de materiales
dc.titleCathodoluminescence and photoluminescence in the core region of Bi_12GeO_20 and Bi_12SiO_20 crystals
dc.typejournal article
dc.volume.number79
dcterms.references1 E. I. Speranskaya and A. A. Arshakumi, Russ. J. Inorg. Chem. 9, 226 (1964). 2 L. Arizmendi, J. M. Cabrera, and F. Agulló-López, Int. J. Optoelectron. 7, 149 (1992), and references therein. 3 C. Zaldo, L. Contreras, L. Arizmendi, and E. Diéguez, Phys. Status Solidi A 114, 97 (1989). 4 E. Diéguez, L. Arizmendi, and J. M. Cabrera, J. Phys. C Solid State Phys. 18, 4777 (1985). 5 E. Jiménez, L. Arizmendi, and J. M. Cabrera, J. Phys. C Solid State Phys. 21, 1299 (1988). 6 B. C. Grabmaier and R. Oberschmid, Phys. Status Solidi A 96, 199 (1986). 7 T. Lukasiewicz and J. Zmija, Acta Phys. Pol. 58, 221 (1980). 8 L. Malicsko, Acta Phys. Hunarica 61, 227 (1987). 9M. D. Aggarwal, W. S. Wang, J. Choi, J. C. Cochrane, and Z. Y. Wang, J. Cryst. Growth 137, 132 (1994). 10M. T. Santos, L. Arizmendi, D. Bravo, and E. Diéguez (unpublished). 11 P. J. Picone, J. Cryst. Growth 87, 421 (1988). 12M. T. Santos, J. C. Rojo, L. Arizmendi, and E. Diéguez, J. Cryst. Growth 142, 103 (1994). 13 J. C. Brice, M. J. Hight, O. F. Hilland, and P. C. C. Whiffin, Philips Tech. Rev. 37, 250 (1977). 14 J. Martínez-López, M. A. Callero, M. T. Santos, L. Arizmendi, and E. Diéguez, J. Cryst. Growth 128, 852 (1993). 15 R. B. Lauer, Appl. Phys. Lett. 17, 178 (1970). 16M. T. Santos, J. C. Rojo, L. Arizmendi, and E. Diéguez, J. Cryst. Growth (in press). 17 S. L. Hou, R. B. Lauer, and R. E. Aldrich, J. Appl. Phys. 44, 2652 (1973). 18 R. Lauer, J. Appl. Phys. 42, 2147 (1971).
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