Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures
| dc.contributor.author | Martil De La Plaza, Ignacio | |
| dc.contributor.author | González Díaz, Germán | |
| dc.contributor.author | Barbolla, J. | |
| dc.contributor.author | Castán, E. | |
| dc.contributor.author | Dueñas, S. | |
| dc.contributor.author | Peláez, R. | |
| dc.contributor.author | Pinacho, R. | |
| dc.contributor.author | Quintanilla, L. | |
| dc.date.accessioned | 2023-06-20T19:08:28Z | |
| dc.date.available | 2023-06-20T19:08:28Z | |
| dc.date.issued | 1997-08-11 | |
| dc.description | © American Institute of Physics. | |
| dc.description.abstract | Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtained. This behavior is explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model. (C) 1997 American Institute of Physics. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/27068 | |
| dc.identifier.doi | 10.1063/1.119658 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.119658 | |
| dc.identifier.relatedurl | http://scitation.aip.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59302 | |
| dc.issue.number | 6 | |
| dc.journal.title | Applied physics Letters | |
| dc.language.iso | eng | |
| dc.page.final | 828 | |
| dc.page.initial | 826 | |
| dc.publisher | Amer Inst Physics | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Silicon-Nitride | |
| dc.subject.keyword | Spectroscopy. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures | |
| dc.type | journal article | |
| dc.volume.number | 71 | |
| dcterms.references | 1) Y. Ma, T. Yasuda, and G. Lucovsky, Appl. Phys. Lett., 64, 25 (1994). 2) Z. Jing, G. Lucovsky, and J. L. Whiten, J. Mol. Struct., 13, 1613 (1995). 3) S. García, I. Mártil, G. González Díaz, E. Castán, S. Dueñas, and M. Fernández, "Deposition of SiNx: H thin films by the ECR plasma method and its application to Al/SiNx :H/Si M-I-S Structures," J. Appl. Phys., (to be published). 4) W. S. Lau, S. J. Fonash, and J. Kanicki, J. Appl. Phys., 66, 2765 (1989). 5) L. He, H. Hasegawa, T. Sawada, and H. Ohno, J. Appl. Phys., 63, 2120 (1988). 6) L. He, H. Hasegawa, T. Sawada, and H. Ohno, Jpn. J. Appl. Phys., Part 1, 27, 512 (1988). 7) F. P. Heiman and G. Warfield, IEEE Trans. Electron Devices ED-12, 167 (1965). 8) P. van Staa, H. Rombach, and R. Kassing, J. Appl. Phys., 54, 4014 (1983). 9) T. Hashizume, H. Hasegawa, R. Riemenschneider, and H. L. Hartangel, Jpn. J. Appl. Phys., Part 1, 33, 727 (1994). 10) D. J. DiMaria and P. C. Arnett, Appl. Phys. Lett., 26, 711 (1975). 11) J. Barbolla, S. Dueñas, and L. Bailón, Solid-State Electron., 35, 285 (1992). | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 6db57595-2258-46f1-9cff-ed8287511c84 | |
| relation.isAuthorOfPublication | a5ab602d-705f-4080-b4eb-53772168a203 | |
| relation.isAuthorOfPublication.latestForDiscovery | a5ab602d-705f-4080-b4eb-53772168a203 |
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