High quality Ti-implanted Si layers above the Mott limit
| dc.contributor.author | Martil De La Plaza, Ignacio | |
| dc.contributor.author | González Díaz, Germán | |
| dc.contributor.author | Olea Ariza, Javier | |
| dc.contributor.author | San Andrés Serrano, Enrique | |
| dc.date.accessioned | 2023-06-20T03:41:09Z | |
| dc.date.available | 2023-06-20T03:41:09Z | |
| dc.date.issued | 2010-05-15 | |
| dc.description | © 2010 American Institute of Physics. Authors would like to acknowledge the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements, C.A.I. de Difracción de Rayos X of the Universidad Complutense de Madrid for GIXRD measurements, C.A.I. de Microscopía for TEM measurements and C.A.I. de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation experiments. This work was partially supported by the Projects NUMANCIA (Grant No. S-0505/ENE/000310) funded by the Comunidad de Madrid, GENESIS-FV (Grant No. CSD2006-00004) funded by the Spanish Consolider National Program, by the Grants (Grant No. CCG07-UCM/TIC-2804) and (Grant No. GR58/08) funded by U.C.M.-B.S.C.H., and by the Project NUMANCIA-2 (Grant No. S2009/ENE/1477) funded by the Comunidad de Madrid. | |
| dc.description.abstract | In this paper, we present a detailed characterization of high quality layers of Si implanted with Ti at high doses. These layers are intended to the formation of an intermediate band (IB) solar cell. The main requirement to obtain an IB material is to reach an impurity concentration beyond the Mott limit, which is, in this case, much higher than the solid solubility limit. To overcome this limit we used the combination of ion implantation and pulsed-laser melting as nonequilibrium techniques. Time-of-flight secondary ion mass spectrometry measurements confirm that Ti concentration exceeds the theoretical Mott limit in the implanted layer, and glancing incidence x-ray diffraction and transmission electron microscopy measurements prove that good crystallinity can be achieved. Sheet resistance and Hall effect mobility show uncommon characteristics that can only been explained assuming the IB existence. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | Comunidad de Madrid | |
| dc.description.sponsorship | Ministerio de Ciencia e Innovación (MICINN) | |
| dc.description.sponsorship | UCM-BSCH | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/25888 | |
| dc.identifier.doi | 10.1063/1.3391274 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.3391274 | |
| dc.identifier.relatedurl | http://scitation.aip.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/44244 | |
| dc.issue.number | 10 | |
| dc.journal.title | Journal of Applied Physics | |
| dc.language.iso | eng | |
| dc.publisher | American Institute of Physics | |
| dc.relation.projectID | NUMANCIA-II-CM (S2009/ENE-1477) | |
| dc.relation.projectID | NUMANCIA-CM (S0505/ENE-000310) | |
| dc.relation.projectID | CONSOLIDER-GENESIS-FV (CSD2006-00004) | |
| dc.relation.projectID | (CCG07-UCM/TIC-2804) | |
| dc.relation.projectID | (GR58/08) | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Solar-Cells | |
| dc.subject.keyword | Silicon | |
| dc.subject.keyword | Efficiency | |
| dc.subject.keyword | Alloys. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | High quality Ti-implanted Si layers above the Mott limit | |
| dc.type | journal article | |
| dc.volume.number | 107 | |
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