Impurity segregation in Al doped GaSb studied by cathodoluminescence microscopy
| dc.book.title | Defect and Impurity Engineered semiconductors II | |
| dc.contributor.author | Hidalgo Alcalde, Pedro | |
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Dutta, P. S. | |
| dc.date.accessioned | 2023-06-20T21:08:51Z | |
| dc.date.available | 2023-06-20T21:08:51Z | |
| dc.date.issued | 1998 | |
| dc.description | © Materials Research Society. Symposium on Defect and Impurity Engineered Semiconductors II at the Materials-Research-Society Spring Meeting (1998. San Francisco, California). | |
| dc.description.abstract | Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with an isoelectronic dopant, aluminum, on the native accepters and on the general structure of extended defects of gallium antimonide single crystals. While there is no significant change in the native defect content, decoration of non-radiative recombination centers or extended defects occurs as a result of aluminum doping. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24741 | |
| dc.identifier.isbn | 1-55899-416-5 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1557/PROC-510-639 | |
| dc.identifier.relatedurl | http://journals.cambridge.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/60818 | |
| dc.issue.number | 510 | |
| dc.page.final | 644 | |
| dc.page.initial | 639 | |
| dc.page.total | 6 | |
| dc.publisher | Materials Research Society | |
| dc.relation.ispartofseries | MRS Online Proceedings Library | |
| dc.rights.accessRights | metadata only access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Engineering | |
| dc.subject.keyword | Electrical & Electronic | |
| dc.subject.keyword | Materials Science | |
| dc.subject.keyword | Multidisciplinary | |
| dc.subject.keyword | Coatings & Films | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Impurity segregation in Al doped GaSb studied by cathodoluminescence microscopy | |
| dc.type | book part | |
| dspace.entity.type | Publication | |
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