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Subband energy in two-band δ-doped semiconductors

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dc.contributor.authorDomínguez-Adame Acosta, Francisco
dc.date.accessioned2023-06-20T20:16:15Z
dc.date.available2023-06-20T20:16:15Z
dc.date.issued1996-02-19
dc.description© Elsevier B.V. or its licensors or contributors. This work is supported by CICYT (Spain) through project MAT95-0325.
dc.description.abstractWe study electron dynamics in a two-band δ-doped semiconductor within the envelope-function approximation. Using a simple parametrization of the confining potential arising from the ionized donors in the δ -doping layer, we are able to find exact solutions of the Dirac-type equation describing the coupling of host bands. As an application we then consider Si δ -doped GaAs. In particular we find that the ground subband energy scales as a power law of the Si concentration per unit area in a wide range of doping levels. In addition, the coupling of host bands leads to a depression of the subband energy due to nonparabolicity effects.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipComisión Interministerial de Ciencia y Tecnología (CICYT), España
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/37916
dc.identifier.doi10.1016/0375-9601(95)00976-0
dc.identifier.issn0375-9601
dc.identifier.officialurlhttp://dx.doi.org/10.1016/0375-9601(95)00976-0
dc.identifier.relatedurlhttp://www.sciencedirect.com/
dc.identifier.relatedurlhttp://arxiv.org/abs/cond-mat/9512127v1
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59984
dc.issue.number4
dc.journal.titlePhysics Letters A
dc.language.isoeng
dc.page.final251
dc.page.initial247
dc.publisherElsevier
dc.relation.projectIDMAT95-0325
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordDoping layer
dc.subject.keywordGAAS
dc.subject.keywordMBE
dc.subject.ucmFísica de materiales
dc.titleSubband energy in two-band δ-doped semiconductors
dc.typejournal article
dc.volume.number211
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