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Study of defects in In_xGa_(1-x)Sb bulk crystals

dc.contributor.authorDíaz-Guerra Viejo, Carlos
dc.contributor.authorChioncel, M. F.
dc.contributor.authorVincent, J
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorBermudez, V.
dc.contributor.authorDiéguez, E.
dc.date.accessioned2023-06-20T10:44:55Z
dc.date.available2023-06-20T10:44:55Z
dc.date.issued2005
dc.description© Wiley-V C H Verlag GmbH. International Conference on Extended Defects in Semiconductors (10. 2004. Chernogolovka, Rusia).
dc.description.abstractThe homogeneity and luminescence properties of undoped and Te-doped In_xGa_(1-x)Sb crystals grown by the Bridgman and Vertical Feeding methods have been studied by cathodoluminescence (CL) and X-ray microanalysis in a scanning electron microscope. CL micrographs reveal the presence of non-radiative grain boundaries and dislocations in the investigated samples. Annealing at 650 degrees C for 36 h significantly improves the structural quality and the compositional homogeneity of the Te-doped crystals. CL spectra of the ternary alloy were found to show features similar to those reported for GaSb.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26150
dc.identifier.doi10.1002/pssc.200460522
dc.identifier.issn1610-1634
dc.identifier.officialurlhttp://dx.doi.org/10.1002/pssc.200460522
dc.identifier.relatedurlhttp://onlinelibrary.wiley.com
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51138
dc.issue.number6
dc.journal.titlePhysica Status Solidi C
dc.page.final1901
dc.page.initial1897
dc.publisherWiley-V C H Verlag GmbH
dc.rights.accessRightsmetadata only access
dc.subject.cdu538.9
dc.subject.keywordLiquid-Phase Epitaxy
dc.subject.keywordSb-Rich Solutions
dc.subject.keywordHigh-Quality Gasb
dc.subject.keywordGallium Antimonide
dc.subject.keywordPhotoluminescence
dc.subject.keywordGrowth
dc.subject.keywordInsb
dc.subject.ucmFísica de materiales
dc.titleStudy of defects in In_xGa_(1-x)Sb bulk crystals
dc.typejournal article
dc.volume.number2
dspace.entity.typePublication
relation.isAuthorOfPublicationb1b44979-3a0d-45d7-aa26-a64b0dbfee18
relation.isAuthorOfPublication68dabfe9-5aec-4207-bf8a-0851f2e37e2c
relation.isAuthorOfPublication.latestForDiscoveryb1b44979-3a0d-45d7-aa26-a64b0dbfee18

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