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Coupled maximum entropy: Monte Carlo estimation of microwave, millimeter-wave and submillimeter-wave spectrum of velocity fluctuations in GaAs

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dc.contributor.authorMiranda Pantoja, José Miguel
dc.contributor.authorSebastián Franco, José Luis
dc.contributor.authorMuñoz San Martín, Sagrario
dc.date.accessioned2023-06-20T18:56:10Z
dc.date.available2023-06-20T18:56:10Z
dc.date.issued1998-01-12
dc.description© 1998 American Institute of Physics. This work has been supported by the TMR programme of the European Community, under Contract No. ERBFMRXCT960050. The authors wish to express their appreciation to Professor D. Pardo and Dr. T. González of the University of Salamanca for their interesting conversations. Herdis Buck is also acknowledged for her linguistic revision of the manuscript.
dc.description.abstractThe maximum entropy method is presented in this letter as a highly interesting procedure for the investigation of high frequency noise properties of bulk semiconductors and electron devices at microscopic level. A Monte Carlo simulation of the hot electron velocity fluctuations in bulk GaAs has been performed to illustrate the efficiency and usefulness of this procedure. Comparisons with the most popular techniques presently used in Monte Carlo simulations of noise have also been performed. (C) 1998 American Institute of Physics.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipTMR programme of the European Community
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/24777
dc.identifier.doi10.1063/1.120696
dc.identifier.issn0003-6951
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.120696
dc.identifier.relatedurlhttp://web.ebscohost.com
dc.identifier.relatedurlhttp://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?arnumber=4898139
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58957
dc.issue.number2
dc.journal.titleApplied physics Letters
dc.language.isoeng
dc.page.final240
dc.page.initial238
dc.publisherAmer Inst Physics
dc.relation.projectIDERBFMRXCT960050
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordSemiconductor-Materials
dc.subject.keywordElectronic Noise
dc.subject.keywordSimulation
dc.subject.keywordDiffusion
dc.subject.keywordDevices
dc.subject.keywordDiodes.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleCoupled maximum entropy: Monte Carlo estimation of microwave, millimeter-wave and submillimeter-wave spectrum of velocity fluctuations in GaAs
dc.typejournal article
dc.volume.number72
dcterms.references1) R. Fauquembergue, J. Zimmermann, A. Kaszynski, E. Constant, and G. Microondes, J. Appl. Phys., 51, 1065, 1980. 2) C. Moglestue, IEEE Trans. Electron Devices, 32, 2092, 1985. 3) T. Kuhn, L. Reggiani, L. Varani, and V. Mitin, Phys. Rev. B, 42, 5702, 1990. 4) L. Varani, L. Reggiani, T. Kuhn, T. González, and D. Pardo, IEEE Trans. Electron Devices, 41, 1916, 1994. 5) J. P. Nougier, IEEE Trans. Electron Devices, 41, 2034, 1994. 6) E. Starikov, P. Shiktorov, V. Gruzinskis, L. Varani, J. C. Vaissiere, J. P. Nougier, and L. Reggiani, J. Appl. Phys., 79, 242, 1996. 7) T. González and D. Pardo, J. Appl. Phys., 73, 7453, 1993. 8) J. Makhoul, Proc. IEEE, 63, 561, 1975. 9) E. T. Jaynes, Proc. IEEE, 70, 939, 1982. 10) S. Haykin, B. W. Currie, and S. B. Kesler, Proc. IEEE 70, 953, 1982. 11) W. H. Press, B. P. Flannery, S. A. Teukolsky, and W. T. Vetterling, Numerical Recipes in C. The Art of Scientific Computing, 2nd ed., Cambridge University Press, Cambridge, 1992. 12) C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation, Springer, Wien, 1989. 13) J. M. M. Pantoja and J. L. Sebastián, IEEE Trans. Electron Device Lett., 18, 258, 1997. 14) T. González, J. E. Velázquez, P. M. Gutiérrez, and D. Pardo, Appl. Phys. Lett., 60, 613, 1992. 15) J. Mateos, T. González, and D. Pardo, J. Appl. Phys., 77, 1564, 1995. 16) T. González, D. Pardo, L. Varani, and L. Reggiani, Semicond. Sci. Technol., 9, 580, 1994. 17) T. González, J. E. Velázquez, P. M. Gutiérrez, and D. Pardo, J. Appl. Phys., 72, 2322, 1992.
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