Electrical characterization of nanocrystalline Si films by scanning tunnelling spectroscopy and beam-induced current in the scanning tunnelling microscope
| dc.contributor.author | Nogales Díaz, Emilio | |
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Plugaru, R | |
| dc.date.accessioned | 2023-06-20T10:40:41Z | |
| dc.date.available | 2023-06-20T10:40:41Z | |
| dc.date.issued | 2003-01 | |
| dc.description | © 2003 IOP Publishing Ltd. This work has been supported by MCYT (Project MAT 2000-2119). RP acknowledges MECD for the research grant SB2000-0164. | |
| dc.description.abstract | Nanocrystalline silicon films, with an average nanocrystal size of about 10 nm, obtained by boron implantation of amorphous silicon layers, have been studied by remote-beam-induced current (REBIC) in a scanning tunnelling microscope (STM) and by current imaging tunnelling spectroscopy. STM images reveal a cell structure with cell sizes of about 200 nm. STM-REBIC images display space-charge regions associated with the cell boundaries. The STM-REBIC contrast has been found to depend on the implantation dose and the thermal treatment given to the sample. The results show the capability of STM-REBIC to image electrically active regions in nanocrystalline silicon films with a resolution of up to 10 nm. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | MCYT | |
| dc.description.sponsorship | MECD | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24415 | |
| dc.identifier.doi | 10.1088/0957-4484/14/1/315 | |
| dc.identifier.issn | 0957-4484 | |
| dc.identifier.officialurl | http://iopscience.iop.org/0957-4484/14/1/315 | |
| dc.identifier.relatedurl | http://iopscience.iop.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/50969 | |
| dc.issue.number | 1 | |
| dc.journal.title | Nanotechnology | |
| dc.language.iso | eng | |
| dc.page.final | 68 | |
| dc.page.initial | 65 | |
| dc.publisher | Iop Publishing Ltd | |
| dc.relation.projectID | MAT 2000-2119 | |
| dc.relation.projectID | SB 2000-0164 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Luminescence Properties | |
| dc.subject.keyword | Tunneling-Microscopy | |
| dc.subject.keyword | Porous Silicon | |
| dc.subject.keyword | States | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Electrical characterization of nanocrystalline Si films by scanning tunnelling spectroscopy and beam-induced current in the scanning tunnelling microscope | |
| dc.type | journal article | |
| dc.volume.number | 14 | |
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| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | f65096c2-6796-43bf-a661-9e2079b73d1c | |
| relation.isAuthorOfPublication | 465cfd5b-6dd4-4a48-a6e3-160df06f7046 | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | f65096c2-6796-43bf-a661-9e2079b73d1c |
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