Thomas-fermi approach to resonant-tunneling in delta-doped diodes
| dc.contributor.author | Díez Alcántara, Eduardo | |
| dc.contributor.author | Domínguez-Adame Acosta, Francisco | |
| dc.contributor.author | Sánchez, Angel | |
| dc.date.accessioned | 2023-06-20T19:11:45Z | |
| dc.date.available | 2023-06-20T19:11:45Z | |
| dc.date.issued | 1995-05-01 | |
| dc.description | © 1995 American- Institute of Physics. F. D.-A. acknowledges support from UCM through project PR161/93-4811. A. S. acknowledges partial support from C.I.C. y T. (Spain) through project PB92-0248 and by the European Union Human Capital and Mobility Programme through contract ERBCHRXCT930413. | |
| dc.description.abstract | We study resonant tunneling in B-S-doped diodes grown by Si-molecular beam epitaxy. A Thomas-Fermi approach is used to obtain the conduction-band modulation. Using a scalar Hamiltonian within the effective-mass approximation. we demonstrate that the occurrence of negative differential resistance (NDR) only involves conduction-band states, whereas interband tunneling effects seem to be negligible. Our theoretical results are in very good agreement with recent experimental observations of NDR in this type of diode. 0 1995 American Institute of Physics. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | UCM | |
| dc.description.sponsorship | C.I.C. y T. (Spain) | |
| dc.description.sponsorship | European Union Human Capital and Mobility Programme | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/27712 | |
| dc.identifier.doi | 10.1063/1.359404 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.359404 | |
| dc.identifier.relatedurl | http://scitation.aip.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59376 | |
| dc.issue.number | 9 | |
| dc.journal.title | Journal of Applied Physics | |
| dc.language.iso | eng | |
| dc.page.final | 4819 | |
| dc.page.initial | 4816 | |
| dc.publisher | American Institute of Physics | |
| dc.relation.projectID | (PR161/93-4811) | |
| dc.relation.projectID | (PB92-0248) | |
| dc.relation.projectID | (ERBCHRXCT930413) | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Physics | |
| dc.subject.keyword | Applied | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Thomas-fermi approach to resonant-tunneling in delta-doped diodes | |
| dc.type | journal article | |
| dc.volume.number | 77 | |
| dcterms.references | 1. J. Wang, Y. Wang, and H. Guo, J. Appl. Phys. 75, 2724 (1994). 2. M. R. Sardela, H. H. Radamson, and G. V. Hansson, Appl. Phys. Lett. 64, 1711 (1994). 3. G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures (Les Editions de Physique, Paris, ,1988). 4. L. Ioratti, Phys. Rev. B 41, 8340 (1990). 5. J. C. Egues, J. C. Barbosa, A. C. Notari, P Basmaji, and L. Ioratti, J. Appl. Phys. 70, 3678 (1991). 6. Domínguez-Adame, B. Méndez, and E. Mac&, Semicond. Sci. Technol. 9, 263 (1994). 7. E Domínguez-Adame and B. Méndez, Phys. Rev. B 49, 11471 (1994). 8. M. Jaros, Physics ai2d Applications of Semiconductor Microstncctures (Clarendon, Oxford, 1989). 9. L. M. R. Scolfaro, D. Beliaev, R. Enderlein, and J. R. Leite, Phys. Rev. B 50, 8699 (1994). 10. H. H. Radamson, M. R. Sardela, 0. Nur, M. Wdlander, B. E. Semelius, W.-X. Ni, and G. V. Hansson, Appl. Phys. Lett. 64, 1482 (1994). 11. F. Capasso and R A. Kiehl, J. Appl. Phys. 58, 1366 (1985). 12. S. M. Booker, E W. Sheard, and G. A. Toombs, Semicond. Sci. Technol. B 7, 439 (1992). | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | bc6a5675-68c7-4ee0-b20c-8560937c1c25 | |
| relation.isAuthorOfPublication | dbc02e39-958d-4885-acfb-131220e221ba | |
| relation.isAuthorOfPublication.latestForDiscovery | dbc02e39-958d-4885-acfb-131220e221ba |
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