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Floquet engineering of Dirac cones on the surface of a topological insulator

dc.contributor.authorDíaz Fernández, Álvaro
dc.contributor.authorDíaz García, Elena
dc.contributor.authorGómez León, Álvaro
dc.contributor.authorPlatero, G.
dc.contributor.authorDomínguez-Adame Acosta, Francisco
dc.date.accessioned2023-06-17T13:30:39Z
dc.date.available2023-06-17T13:30:39Z
dc.date.issued2019-08-06
dc.description©2019 American Physical Society The authors thank P. Rodriguez for very enlightening discussions. This research was supported by MINECO (Grants No. MAT2016-75955 and No. MAT2017-86717-P). A.D.-F. acknowledges support from the UCM-Santander Program (Grant No. CT27/16-CT28/16), and A.G.-L. acknowledges the Juan de la Cierva program. A.G.-L. and G.P. acknowledge support from the CSIC Research Platform PTI-001.
dc.description.abstractWe propose to Floquet engineer Dirac cones at the surface of a three-dimensional topological insulator. We show that a large tunability of the Fermi velocity can be achieved as a function of the polarization, direction, and amplitude of the driving field. Using this external control, the Dirac cones in the quasienergy spectrum may become elliptic or massive, in accordance with experimental evidence. These results help us to understand the interplay of surface states and external ac driving fields in topological insulators. In our work we use the full Hamiltonian for the three-dimensional system instead of effective surface Hamiltonians, which are usually considered in the literature. Our findings show that the Dirac cones in the quasienergy spectrum remain robust even in the presence of bulk states, and therefore, they validate the usage of effective surface Hamiltonians to explore the properties of Floquet-driven topological boundaries. Furthermore, our model allows us to introduce out-of-plane field configurations which cannot be accounted for by effective surface Hamiltonians.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Economia y Competitividad (MINECO)
dc.description.sponsorshipUniversidad Complutense de Madrid/Banco de Santander
dc.description.sponsorshipConsejo Superior de Investigaciones Científicas (CSIC)
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/57251
dc.identifier.doi10.1103/PhysRevB.100.075412
dc.identifier.issn2469-9950
dc.identifier.officialurlhttp://dx.doi.org/10.1103/PhysRevB.100.075412
dc.identifier.relatedurlhttps://journals.aps.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/13654
dc.issue.number7
dc.journal.titlePhysical review B
dc.language.isoeng
dc.publisherAmerican Physical Society
dc.relation.projectID(MAT2016-75955; MAT2017-86717-P)
dc.relation.projectID(CT27/16-CT28/16)
dc.relation.projectIDPTI-001
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordInterface states
dc.subject.keywordRealization
dc.subject.keywordTransport
dc.subject.keywordElectrons
dc.subject.keywordGraphene
dc.subject.keywordModel
dc.subject.keywordGap
dc.subject.ucmFísica de materiales
dc.subject.ucmFísica del estado sólido
dc.subject.unesco2211 Física del Estado Sólido
dc.titleFloquet engineering of Dirac cones on the surface of a topological insulator
dc.typejournal article
dc.volume.number100
dspace.entity.typePublication
relation.isAuthorOfPublication0622c92a-4fa0-4105-b6d0-e6dbb2d45ee0
relation.isAuthorOfPublicationd03da7bf-8066-4f33-93e2-ac077fd4fcb8
relation.isAuthorOfPublicationdbc02e39-958d-4885-acfb-131220e221ba
relation.isAuthorOfPublication.latestForDiscovery0622c92a-4fa0-4105-b6d0-e6dbb2d45ee0

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