Sub-nT resolution of single layer sensor based on the AMR effect in La_2/_3Sr_1/_3MnO_3 Thin Films
dc.contributor.author | Enger, Luiz Guilherme | |
dc.contributor.author | Flament, Stephane | |
dc.contributor.author | Bhatti, Imtiaz-Noor | |
dc.contributor.author | Guillet, Bruno | |
dc.contributor.author | Sing, Marc Lam Chok | |
dc.contributor.author | Pierron, Victor | |
dc.contributor.author | Lebargy, Sylvain | |
dc.contributor.author | Díez, Jose Manuel | |
dc.contributor.author | Vera, Arturo | |
dc.contributor.author | Martínez, Isidoro | |
dc.contributor.author | Guerrero, Rubén | |
dc.contributor.author | Pérez García, Lucas | |
dc.contributor.author | Perna, Paolo | |
dc.contributor.author | Camarero, Julio | |
dc.contributor.author | Miranda, Rodolfo | |
dc.contributor.author | González, María Teresa | |
dc.contributor.author | Mechin, Laurence | |
dc.date.accessioned | 2023-06-22T10:41:18Z | |
dc.date.available | 2023-06-22T10:41:18Z | |
dc.date.issued | 2022-02 | |
dc.description | ©2022Institute of Electrical and Electronics Engineers This work was supported by the European Union Horizon 2020 research and innovation program under Grant 737116. | |
dc.description.abstract | Single-layer magnetoresistive sensors were designed in a Wheatstone bridge configuration using La_2/_3Sr_1/_3MnO_3 ferromagnetic oxide thin film. Uniaxial anisotropy was induced by performing epitaxial deposition of the films on top of vicinal SrTiO_3 substrate. X-ray scan confirms the high crystalline quality of the films and the magnetic anisotropy was checked by magneto-optical Kerr effect measurements. Thanks to the anisotropic magnetoresistive effect and the very low noise measured in the devices, sub-nT resolution was achieved above 100 Hz at 310 K. | |
dc.description.department | Depto. de Física de Materiales | |
dc.description.faculty | Fac. de Ciencias Físicas | |
dc.description.refereed | TRUE | |
dc.description.sponsorship | Unión Europea. Horizonte 2020 | |
dc.description.status | pub | |
dc.eprint.id | https://eprints.ucm.es/id/eprint/71477 | |
dc.identifier.doi | 10.1109/TMAG.2021.3089373 | |
dc.identifier.issn | 0018-9464 | |
dc.identifier.officialurl | http://dx.doi.org/10.1109/TMAG.2021.3089373 | |
dc.identifier.relatedurl | https://ieeexplore.ieee.org | |
dc.identifier.uri | https://hdl.handle.net/20.500.14352/71377 | |
dc.issue.number | 2 | |
dc.journal.title | IEEE transactions on magnetics | |
dc.language.iso | eng | |
dc.publisher | IEEE-Institute of Electrical and Electronics Engineers | |
dc.relation.projectID | ByAXON (737116) | |
dc.rights.accessRights | open access | |
dc.subject.cdu | 538.9 | |
dc.subject.keyword | Giant magnetoresistance | |
dc.subject.keyword | Buffer layer | |
dc.subject.keyword | Surface | |
dc.subject.keyword | Anisotropic magnetoresistance (AMR) | |
dc.subject.keyword | Functional oxide | |
dc.subject.keyword | La_2/_3Sr_1/_3MnO_3 thin film | |
dc.subject.keyword | Magnetic sensor | |
dc.subject.keyword | Planar Hall effect bridge (PHEB) sensor | |
dc.subject.keyword | Uniaxial anisotropy | |
dc.subject.ucm | Física de materiales | |
dc.subject.ucm | Física del estado sólido | |
dc.subject.unesco | 2211 Física del Estado Sólido | |
dc.title | Sub-nT resolution of single layer sensor based on the AMR effect in La_2/_3Sr_1/_3MnO_3 Thin Films | |
dc.type | journal article | |
dc.volume.number | 58 | |
dspace.entity.type | Publication | |
relation.isAuthorOfPublication | 01b88344-8278-4947-9475-d5b2a652b9d7 | |
relation.isAuthorOfPublication.latestForDiscovery | 01b88344-8278-4947-9475-d5b2a652b9d7 |
Download
Original bundle
1 - 1 of 1