Sub-nT resolution of single layer sensor based on the AMR effect in La_2/_3Sr_1/_3MnO_3 Thin Films

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dc.contributor.authorEnger, Luiz Guilherme
dc.contributor.authorFlament, Stephane
dc.contributor.authorBhatti, Imtiaz-Noor
dc.contributor.authorGuillet, Bruno
dc.contributor.authorSing, Marc Lam Chok
dc.contributor.authorPierron, Victor
dc.contributor.authorLebargy, Sylvain
dc.contributor.authorDíez, Jose Manuel
dc.contributor.authorVera, Arturo
dc.contributor.authorMartínez, Isidoro
dc.contributor.authorGuerrero, Rubén
dc.contributor.authorPérez García, Lucas
dc.contributor.authorPerna, Paolo
dc.contributor.authorCamarero, Julio
dc.contributor.authorMiranda, Rodolfo
dc.contributor.authorGonzález, María Teresa
dc.contributor.authorMechin, Laurence
dc.date.accessioned2023-06-22T10:41:18Z
dc.date.available2023-06-22T10:41:18Z
dc.date.issued2022-02
dc.description©2022Institute of Electrical and Electronics Engineers This work was supported by the European Union Horizon 2020 research and innovation program under Grant 737116.
dc.description.abstractSingle-layer magnetoresistive sensors were designed in a Wheatstone bridge configuration using La_2/_3Sr_1/_3MnO_3 ferromagnetic oxide thin film. Uniaxial anisotropy was induced by performing epitaxial deposition of the films on top of vicinal SrTiO_3 substrate. X-ray scan confirms the high crystalline quality of the films and the magnetic anisotropy was checked by magneto-optical Kerr effect measurements. Thanks to the anisotropic magnetoresistive effect and the very low noise measured in the devices, sub-nT resolution was achieved above 100 Hz at 310 K.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipUnión Europea. Horizonte 2020
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/71477
dc.identifier.doi10.1109/TMAG.2021.3089373
dc.identifier.issn0018-9464
dc.identifier.officialurlhttp://dx.doi.org/10.1109/TMAG.2021.3089373
dc.identifier.relatedurlhttps://ieeexplore.ieee.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/71377
dc.issue.number2
dc.journal.titleIEEE transactions on magnetics
dc.language.isoeng
dc.publisherIEEE-Institute of Electrical and Electronics Engineers
dc.relation.projectIDByAXON (737116)
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordGiant magnetoresistance
dc.subject.keywordBuffer layer
dc.subject.keywordSurface
dc.subject.keywordAnisotropic magnetoresistance (AMR)
dc.subject.keywordFunctional oxide
dc.subject.keywordLa_2/_3Sr_1/_3MnO_3 thin film
dc.subject.keywordMagnetic sensor
dc.subject.keywordPlanar Hall effect bridge (PHEB) sensor
dc.subject.keywordUniaxial anisotropy
dc.subject.ucmFísica de materiales
dc.subject.ucmFísica del estado sólido
dc.subject.unesco2211 Física del Estado Sólido
dc.titleSub-nT resolution of single layer sensor based on the AMR effect in La_2/_3Sr_1/_3MnO_3 Thin Films
dc.typejournal article
dc.volume.number58
dspace.entity.typePublication
relation.isAuthorOfPublication01b88344-8278-4947-9475-d5b2a652b9d7
relation.isAuthorOfPublication.latestForDiscovery01b88344-8278-4947-9475-d5b2a652b9d7
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