Physical properties of plasma deposited SiOx thin films
| dc.contributor.author | Martil De La Plaza, Ignacio | |
| dc.contributor.author | González Díaz, Germán | |
| dc.contributor.author | Prado Millán, Álvaro Del | |
| dc.contributor.author | San Andrés Serrano, Enrique | |
| dc.date.accessioned | 2023-06-20T19:00:37Z | |
| dc.date.available | 2023-06-20T19:00:37Z | |
| dc.date.issued | 2002-09-26 | |
| dc.description | European Vacuum Conference (EVC-7)(7. 2001. Madrid)/European Topical Conference on Hard Coatings (ETCHC-3) (3. 2001. Madrid). © 2002 Elsevier Science Ltd. All rights reserved. The authors acknowledge C.A.I. de Implantación ónica (U.C.M.) for technical support and C.A.I. de espectroscopía (U.C.M.) for availability of the FTIR spectrometer. The work has been partially financed by the CICYT (Spain) under Grant TIC 2001-1253. | |
| dc.description.abstract | The composition (x = [O]/[Si]), hydrogen content, bonding configuration and paramagnetic defects of SiOx films were studied. Films were deposited by the electron cyclotron resonance plasma method at room temperature using SiH4 and O-2 as precursor gases, and depending on gases flux ratio, films from x approximate to 2 to 0.9 were obtained. Infrared spectroscopy analysis showed the presence of different vibration modes: Si-O stretching, used to estimate film composition, bending and rocking with positions nearly independent on film composition, and various Si-H peaks: stretching and wagging-bending. Films with non-stoichiometric composition show a wider peak than the ones deposited at higher gas ratios. Ellipsometry measurements showed a refractive index lambda = 632.8 nm comprised between 1.45 and 2.04. Electron spin resonance measurements shows that the stoichiometric films (x approximate to 2) present the well known E' centre (.SidropO(3)) with concentrations in the 10(16)cm(-3) range, while for Si-rich films (x much less than 2) the Si dangling bond centre (D centre, .SidropSi(3)) is dominant, with concentrations in the 10(18)-10(19) cm(-3) range. For near-stoichiometric (x approximate to 1.9) films also both E' and D centres are present, but in this case the E' centre is dominant. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | CICYT (Spain) | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/26174 | |
| dc.identifier.doi | 10.1016/S0042-207X(02)00243-9 | |
| dc.identifier.issn | 0042-207X | |
| dc.identifier.officialurl | http://dx.doi.org/10.1016/S0042-207X(02)00243-9 | |
| dc.identifier.relatedurl | http://www.sciencedirect.com/ | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59099 | |
| dc.issue.number | 3-4 | |
| dc.journal.title | Vacuum | |
| dc.language.iso | eng | |
| dc.page.final | 529 | |
| dc.page.initial | 525 | |
| dc.publisher | Pergamon-Elsevier Science Ltd. | |
| dc.relation.projectID | TIC 2001-1253 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Hydrogenated Amorphous-Silicon | |
| dc.subject.keyword | Electron-Cyclotron-Resonance | |
| dc.subject.keyword | Rich Oxide | |
| dc.subject.keyword | Capacitors | |
| dc.subject.keyword | System. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Physical properties of plasma deposited SiOx thin films | |
| dc.type | journal article | |
| dc.volume.number | 67 | |
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