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Cathodoluminescence microscopy and spectroscopy of porous n-InP

dc.contributor.authorHidalgo Alcalde, Pedro
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorSirbu, L.
dc.contributor.authorTiginyanu, M.
dc.date.accessioned2023-06-20T10:42:42Z
dc.date.available2023-06-20T10:42:42Z
dc.date.issued2005-12
dc.description© 2007 IOP Publishing Ltd. This work has been supported by the Ministry of Education and Science of Spain under a Ramon y Cajal Contract, by the project MAT2003-09873 and by the project MEC (MAT 2003-00455).
dc.description.abstractThe luminescence of porous InP prepared by electrochemical etching is investigated by cathodoluminescence (CL) in a scanning electron microscope (SEM). Anodization causes a strong reduction of CL intensity as well as a blue spectral shift. Additional blue shift and enhancement of CL intensity is observed in samples cracked in vacuum by the effect of the SEM electron beam, which is explained by the reduction of the influence of surface states on the recombination mechanism. The relationship of the CL spatial distribution with the multilayer porous structure is described.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipEspaña. Ministerio de Educación y Ciencia
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/25547
dc.identifier.doi10.1088/0268-1242/20/12/006
dc.identifier.issn0268-1242
dc.identifier.officialurlhttp://dx.doi.org/10.1088/0268-1242/20/12/006
dc.identifier.relatedurlhttp://iopscience.iop.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51052
dc.issue.number12
dc.journal.titleSemiconductor Science and Technology
dc.language.isoeng
dc.page.final1182
dc.page.initial1179
dc.publisherIop Publishing Ltd
dc.relation.projectIDMAT 2003-09873
dc.relation.projectIDMAT 2003-00455
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordVisible Photoluminescence
dc.subject.keywordGap
dc.subject.keywordGaas
dc.subject.keywordUniform
dc.subject.keywordLayers
dc.subject.keywordPores
dc.subject.ucmFísica de materiales
dc.titleCathodoluminescence microscopy and spectroscopy of porous n-InP
dc.typejournal article
dc.volume.number20
dcterms.references[1] Tseng A A, Chen K, Chen C D, Ma K J 2003 IEEE Trans. Electron. Pack. Man. 26 141. [2] Facsko S, Bobek T, Kurz H, Dekorsy T, Kyrsta S, Cremer R 2002 Appl. Phys. Lett. 80 130. [3] Shchukin V A, Bimberg D 1999 Rev. Mod. Phys. 71 1125. [4] Facsko S, Kurz H, and Dekorsy T 2001 Phys. Rev. B 63 165329 [5] Facsko S, Dekorsy T, Koerdt C, Trappe C, Kurz H, Vogt A, Hartnagel H L 1999 Science 285 1551. [6] Facsko S, Bobek T, Dekorsy T, Kurz H 2001 Phys. Stat. Sol. (b) 224 537. [7] Valbusa V, Boragno C, Buatier de Mongeot F 2002 J. Phys.; Cond Mat. 14 8153. [8] Carter G 2001 J. Phys. D; Appl. Phys. 34 R1. [9] Panin G N, Dutta P S, Piqueras J, Dieguez E 1995 Appl. Phys. Lett. 67 3584. [10] Dutta P S, Bhat H L, Kumar V 1997 J. Appl. Phys 81 5821. [11] Willoughby A F 1978 Rep. Prog. Phys. 4 1665. [12] Frost F, Schindler A, Bigl F 2000 Phys. Rev. Lett. 85 4116. [13] Bradley R M, Harper J M E 1988 J. Vac. Sci. Technol. A 6 2390. [14] Makeev M A and Barabasi A L 1997 Appl. Phys. Lett. 71 2800. [15] Plaza J L, Ruiz C M, Capote B, and Diéguez E 2006 Surf. Coat Tech. in press [16] Hidalgo P, Méndez B, Dutta P S, Piqueras J and Diéguez E 1998 Phys. Rev. B 57 6479
dspace.entity.typePublication
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relation.isAuthorOfPublication.latestForDiscoveryc834e5a4-3450-4ff7-8ca1-663a43f050bb

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