Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals

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dc.contributor.authorRodríguez Fernández, J.
dc.contributor.authorCarcelen, V.
dc.contributor.authorHidalgo Alcalde, Pedro
dc.contributor.authorVijayan, N.
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorSochinskii, N. V.
dc.contributor.authorPérez, J. M.
dc.contributor.authorDieguez, E.
dc.date.accessioned2023-06-20T03:40:03Z
dc.date.available2023-06-20T03:40:03Z
dc.date.issued2009-08-15
dc.description© 2009 American Institute of Physics. This work was partially supported by the following Projects: Grant Nos. MEC-ESP2006-09935, CM-S-0505/ MAT-079, and FP7-SEC-2007-01 “European Commision,” and Contract No. 14240/00/NL7SH “European Space Agency.” One of the authors, V.C., thanks MEC, Spain for financial support. N.V. is grateful to Department of Science and Technology, Government of India for providing the BOYSCAST fellowship. The author J.R.F. is thankful to the Universidad Autónoma of Madrid for the financial support.
dc.description.abstractCadmium zinc telluride, CdZnTe, bulk single crystals doped with 10^19 at./cm^3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipEuropean Commision
dc.description.sponsorshipEuropean Space Agency
dc.description.sponsorshipDepartment of Science and Technology, Government of India
dc.description.sponsorshipUniversidad Autónoma de Madrid
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/25508
dc.identifier.doi10.1063/1.3197031
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.3197031
dc.identifier.relatedurlhttp://scitation.aip.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/44202
dc.issue.number4
dc.journal.titleJournal of Applied of Physics
dc.language.isoeng
dc.publisherAmer Inst Physics
dc.relation.projectIDMEC-ESP2006-09935
dc.relation.projectIDCM-S-0505/MAT-079
dc.relation.projectID(FP7-SEC-2007-01)
dc.relation.projectID14240/001NL7SH
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordCdte
dc.subject.keywordGrowth
dc.subject.ucmFísica de materiales
dc.titleRelationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
dc.typejournal article
dc.volume.number106
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