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Formation of porous layers on n-GaSb by electrochemical etching

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dc.contributor.authorStorgards, J.
dc.contributor.authorMéndez Martín, María Bianchi
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorChenot, M.
dc.contributor.authorDimroth, F.
dc.contributor.authorBett, A.V.
dc.date.accessioned2023-06-20T10:40:13Z
dc.date.available2023-06-20T10:40:13Z
dc.date.issued2004-07
dc.description© 2004 IOP Publishing Ltd. This work is carried out in the framework of a European Marie Curie project (HPMT-CT-2001-00215). Support of MCYT (MAT2003-00455) is acknowledged.
dc.description.abstractThe effect of electrochemical etching of n-type GaSb in aqueous solutions of HCl and HF has been analysed. By anodization in HCl, two different morphologies of porous layers were observed depending on the current density. At low current density (0.5 mA cm_(-2)) a macroporous layer is formed with the pores following preferential directions, while at high current density (15 mA cm_(-2)) pores of sizes less than 100 nm were observed. Furthermore, a comparison between the luminescence in the porous layer and bulk GaSb is also performed. On the other hand, anodization in HF leads to an electropolishing process and no porosification is obtained.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipEuropean Marie Curie project
dc.description.sponsorshipMCYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/24369
dc.identifier.doi10.1088/0268-1242/19/7/021
dc.identifier.issn0268-1242
dc.identifier.officialurlhttp://iopscience.iop.org/0268-1242/19/7/021
dc.identifier.relatedurlhttp://iopscience.iop.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/50954
dc.issue.number7
dc.journal.titleSemiconductor Science and Technology
dc.language.isoeng
dc.page.final905
dc.page.initial902
dc.publisherIop Publishing Ltd
dc.relation.projectIDHPMT-CT-2001-00215
dc.relation.projectIDMAT 2003-00455
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordSilicon
dc.subject.keywordGaas
dc.subject.keywordCathodoluminescence
dc.subject.keywordSemiconductors
dc.subject.keywordSurface
dc.subject.keywordInp
dc.subject.keywordPhotoluminescence
dc.subject.keywordInitiation
dc.subject.keywordGrowth
dc.subject.keywordPores
dc.subject.ucmFísica de materiales
dc.titleFormation of porous layers on n-GaSb by electrochemical etching
dc.typejournal article
dc.volume.number19
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