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Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

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dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorGarcía Hemme, Eric
dc.contributor.authorGarcía Hernansanz, Rodrigo
dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorOlea Ariza, Javier
dc.contributor.authorPastor Pastor, David
dc.contributor.authorPrado Millán, Álvaro Del
dc.date.accessioned2023-06-19T13:26:10Z
dc.date.available2023-06-19T13:26:10Z
dc.date.issued2014-05-26
dc.description© AIP Publishing LLC. The authors would like to acknowledge the CAI de Técnicas Físicas of the Universidad Complutense de Madrid for the ion implantations and metallic evaporations. This work was partially supported by the Project NUMANCIA II (Grant No. S-2009/ENE/1477) funded by the Comunidad de Madrid. Research by E. Garca-Hemme was also supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM). J. Olea and D. Pastor thank Professor A. Mart_ı and Professor A. Luque for useful discussions and guidance and acknowledge financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402 and JCI-2011-11471), under which this research was undertaken.
dc.description.abstractWe report room-temperature operation of 1 x 1 cm(2) infrared photoconductive photodetectors based on silicon supersaturated with titanium. We have fabricated these Si-based infrared photodetectors devices by means of ion implantation followed by a pulsed laser melting process. A high sub-band gap responsivity of 34 mVW(-1) has been obtained operating at the useful telecommunication applications wavelength of 1.55 mu m (0.8 eV). The sub-band gap responsivity shows a cut-off frequency as high as 1.9 kHz. These Si-based devices exhibit a non-previous reported specific detectivity of 1.7 x 10(4) cm Hz(1/2) W-1 at 660Hz, under a 1.55 mu m wavelength light. This work shows the potential of Ti supersaturated Si as a fully CMOS-compatible material for the infrared photodetection technology.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipComunidad de Madrid
dc.description.sponsorshipMoncloa Campus of International Excellence (UCM-UPM)
dc.description.sponsorshipMICINN
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/27164
dc.identifier.doi10.1063/1.4879851
dc.identifier.issn0003-6951
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.4879851
dc.identifier.relatedurlhttp://scitation.aip.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/33683
dc.issue.number21
dc.journal.titleApplied physics letters
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.projectIDNUMANCIA II (S2009/ENE-1477)
dc.relation.projectID(JCI-2011-10402)
dc.relation.projectID(JCI-2011-11471)
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordTransition
dc.subject.keywordInsulator
dc.subject.keywordGold.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleRoom-temperature operation of a titanium supersaturated silicon-based infrared photodetector
dc.typejournal article
dc.volume.number104
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