Ultra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO_(2)
| dc.contributor.author | Ramírez, J. G. | |
| dc.contributor.author | Schmidt, Rainer | |
| dc.contributor.author | Sharoni, A. | |
| dc.contributor.author | Gómez, M. E. | |
| dc.contributor.author | Schuller, Ivan K. | |
| dc.contributor.author | Patiño, Edgar J. | |
| dc.date.accessioned | 2023-06-19T14:55:35Z | |
| dc.date.available | 2023-06-19T14:55:35Z | |
| dc.date.issued | 2013-02-11 | |
| dc.description | © 2013 American Institute of Physics. This work was supported by AFOSR Grant No. FA9550- 12-1-0381, COLCIENCIAS, CENM and “El Patrimonio Autónomo Fondo Nacional de Financiamiento para la Ciencia, la Tecnología y la Innovación Francisco José de Caldas” Contract RC—No. 275-2011, and ISF Grant No. 727/11. R.S. wishes to acknowledge a Ramón y Cajal Fellowship from the Ministerio de Ciencia e Innovación (MICINN) in Spain. E.J.P. wishes to acknowledge “Programa Nacional de Ciencias Básicas” COLCIENCIAS (No. 120452128168). During the publication process of this manuscript, out-of-plane impedance measurements were published on VO_(2) films grown on TiO_(2) substrates. These results also imply the coexistence of metallic and insulating phases. | |
| dc.description.abstract | Temperature dependent dielectric spectroscopy measurements on vanadium dioxide thin films allow us to distinguish between the resistive, capacitive, and inductive contributions to the impedance across the metal-insulator transition (MIT). We developed a single, universal, equivalent circuit model to describe the dielectric behavior above and below the MIT. Our model takes account of phase-coexistence of metallic and insulating regions. We find evidence for the existence at low temperature of ultra-thin threads as described by a resistor-inductor element. A conventional resistorcapacitor element connected in parallel accounts for the insulating phase and the dielectric relaxation. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | Ministerio de Ciencia e Innovacion (MICINN) | |
| dc.description.sponsorship | AFOSR | |
| dc.description.sponsorship | COLCIENCIAS | |
| dc.description.sponsorship | CENM | |
| dc.description.sponsorship | El Patrimonio Autónomo Fondo Nacional de Financiamiento para la Ciencia, la Tecnología y la Innovación Francisco José de Caldas” | |
| dc.description.sponsorship | ISF | |
| dc.description.sponsorship | Programa Nacional de Ciencias Básicas COLCIENCIAS | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/32500 | |
| dc.identifier.doi | 10.1063/1.4792052 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.4792052 | |
| dc.identifier.relatedurl | http://scitation.aip.org/ | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/34809 | |
| dc.issue.number | 6 | |
| dc.journal.title | Applied physics letters | |
| dc.language.iso | eng | |
| dc.publisher | American Institute of Physics | |
| dc.relation.projectID | FA9550-12-1-0381 | |
| dc.relation.projectID | RC—No. 275-2011 | |
| dc.relation.projectID | 727/11 | |
| dc.relation.projectID | 120452128168 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Vanadium dioxide | |
| dc.subject.keyword | Film. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Ultra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO_(2) | |
| dc.type | journal article | |
| dc.volume.number | 102 | |
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| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 4d468566-fa66-4e1c-8463-382517edca6e | |
| relation.isAuthorOfPublication.latestForDiscovery | 4d468566-fa66-4e1c-8463-382517edca6e |
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