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Interfacial effects on the tunneling magnetoresistance in La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunneling junctions

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dc.contributor.authorGalceran, R.
dc.contributor.authorBalcells, Ll.
dc.contributor.authorMartínez-Boubeta, C.
dc.contributor.authorBozzo, B.
dc.contributor.authorCisneros-Fernández, J.
dc.contributor.authorMata, M. de la
dc.contributor.authorMagén, C.
dc.contributor.authorArbiol, J.
dc.contributor.authorTornos, J.
dc.contributor.authorCuéllar Jiménez, Fabian Andrés
dc.contributor.authorSefrioui, Zouhair
dc.contributor.authorCebollada, A.
dc.contributor.authorGolmar, F.
dc.contributor.authorHuesos, L.E.
dc.contributor.authorCasanova, F.
dc.contributor.authorSantamaría Sánchez-Barriga, Jacobo
dc.contributor.authorMartínez, B.
dc.date.accessioned2023-06-18T06:47:51Z
dc.date.available2023-06-18T06:47:51Z
dc.date.issued2015-09-16
dc.description© 2015 American Physical Society. We acknowledge financial support from the Spanish MINECO through grants (MAT2012-33207, MAT2011- 27470-C02, MAT2012-37638 and Consolider Ingenio 2010 - CSD2009-00013 (Imagine)), from CAM through Grant No. S2009/MAT-1756 (Phama) and Basque Government (PI2011- 1). Financial support from EC through FEDER program and Marie Curie Actions (256470-ITAMOSCINOM) is also acknowledged. C.M.B. thanks the Spanish MINECO for the financial support through the RyC program. The authors would like to thank the technical staff of the ICMAB for their assistance
dc.description.abstractWe report on magnetotransport properties on La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunnel junctions grown epitaxially on top of (001)-oriented SrTiO_(3) substrates by sputtering. It is shown that the magnetoresistive response depends critically on the MgO/Fe interfacial properties. The appearance of an FeOX layer by the interface destroys the 1 symmetry filtering effect of the MgO/Fe system and only a small negative tunneling magnetoresistance (TMR) (∼ −3 %) is measured. However, in annealed samples a switchover from positive TMR (∼ +25% at 70 K) to negative TMR (∼ −1 %) is observed around 120 K. This change is associated with the transition from semiconducting at high T to insulating at low T taking place at the Verwey transition (TV ∼ 120 K) in Fe3O4, thus suggesting the formation of a very thin slab of magnetite at the MgO/Fe interface during annealing treatments. These results highlight the relevance of interfacial properties on the tunneling conduction process and how it can be substantially modified through appropriate interface engineering.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipComunidad de Madrid
dc.description.sponsorshipMinisterio de Economía y Competitividad (MINECO)
dc.description.sponsorshipBasque Government
dc.description.sponsorshipFEDER program
dc.description.sponsorshipMarie Curie Actions
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/33751
dc.identifier.doi10.1103/PhysRevB.92.094428
dc.identifier.issn1098-0121
dc.identifier.officialurlhttp://dx.doi.org/10.1103/PhysRevB.92.094428
dc.identifier.relatedurlhttp://journals.aps.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/24217
dc.issue.number9
dc.journal.titlePhysical review B
dc.language.isoeng
dc.publisherAmerican Physical Society
dc.relation.projectIDPHAMA-CM (S2009/MAT-1756)
dc.relation.projectIDMAT2012-33207
dc.relation.projectIDMAT2011- 27470-C02
dc.relation.projectIDMAT2012-37638
dc.relation.projectIDConsolider Ingenio 2010 - CSD2009-00013 (Imagine)
dc.relation.projectIDPI2011- 1
dc.relation.projectID256470-ITAMOSCINOM
dc.relation.projectIDRyC program
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordSpin polarization
dc.subject.keywordFe/MgO interface
dc.subject.keywordRoom-temperature
dc.subject.keywordX-ray. Barrier
dc.subject.keywordMgO
dc.subject.keywordOxide
dc.subject.keywordFe.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleInterfacial effects on the tunneling magnetoresistance in La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunneling junctions
dc.typejournal article
dc.volume.number92
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