Aviso: para depositar documentos, por favor, inicia sesión e identifícate con tu cuenta de correo institucional de la UCM con el botón MI CUENTA UCM. No emplees la opción AUTENTICACIÓN CON CONTRASEÑA
 

Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering

Simple item page
dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorArtús, L.
dc.contributor.authorBlanco, N
dc.contributor.authorCuscó, R.
dc.contributor.authorHernández, S.
dc.date.accessioned2023-06-20T10:48:18Z
dc.date.available2023-06-20T10:48:18Z
dc.date.issued2003-03-01
dc.description© American Institute of Physics. The authors wish to acknowledge the Spanish Ministerio de Ciencia y Tecnología for financial support. One of the authors (S.H.)acknowledges support from the Departament d’Universitats i Recerca de la Generalitat de Catalunya.
dc.description.abstractRaman scattering has been used to study the lattice recovery and electrical activation of Si+-implanted In0.53Ga0.47 As achieved by rapid thermal annealing. The degree of crystallinity recovery, of totally amorphized samples is studied for annealing temperatures between 300 and 875degreesC. A good degree of recovery is achieved for an annealing temperature of 600degreesC. Higher annealing temperatures are required to electrically activate the Si donors. The observed LO phonon-plasmon coupled modes allow us to monitor the electrical activation by means of Raman scattering. We find that electrical activation sets in for annealing temperatures around 700degreesC, and gradually increases up to an annealing temperature of 875degreesC. The optimal conditions for the rapid thermal annealing are found to be 875degreesC for 10 s.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipSpanish Ministerio de Ciencia y Tecnología
dc.description.sponsorshipDepartament d’Universitats i Recerca de la Generalitat de Catalunya
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/27440
dc.identifier.doi10.1063/1.1542659
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.1542659
dc.identifier.relatedurlhttp://scitation.aip.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51254
dc.issue.number5
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.page.final2662
dc.page.initial2659
dc.publisherAmerican Institute of Physics
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordSpectroscopy
dc.subject.keywordGa1-xNxAs
dc.subject.keywordMode
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleStudy of the electrical activation of Si+-implanted InGaAs by means of Raman scattering
dc.typejournal article
dc.volume.number93
dcterms.references1) Y. G. Wey, D. L. Crawford, K. Giboney, J. E. Bowers, M. J. Rodwell, P. Silvestre, M. J. Hafich, and G. Y. Robinson, Appl. Phys. Lett., 58, 2156, 1991. 2) F. E. Ejeckam, C. L. Chua, Z. H. Zhu, Y. H. Lo, M. Hong, and R. Bhat, Appl. Phys. Lett., 67, 3936, 1995. 3) K. W. Wang, C. L. Cheng, J. Long, and D. Mitcham, IEEE Electron Device Lett., 9, 205, 1988. 4) S. Koumetz, J. Marcon, K. Ketata, M. Ketata, C. Dubon-Chevalier, P. Launay, and J. L. Benchimol, Appl. Phys. Lett., 67, 2161, 1995. 5) J. G. Bauer, H. Albrecht, L. Hoffmann, D. Römer, and J. W. Walter, IEEE Photonics Technol. Lett., 8, 566, 1996. 6) S. Hernández, B. Marcos, R. Cuscó, N. Blanco, G. González-Díaz, and L. Artús, J. Lumin., 87-89, 721 2000. 7) L. Artús, R. Cuscó, J. Ibáñez, J. M. Martín, and G. González-Díaz, J. Appl. Phys., 82, 3736, 1997. 8) K. Kamimoto and T. Katoda, Appl. Phys. Lett., 42, 811, 1983. 9) S. M. Kelso, D. E. Aspnes, M. A. Pollack, and R. E. Nahory, Phys. Rev. B, 26, 6669, 1982. 10) J. Groenen, R. Carles, G. Landa, C. Guerret-Piécourt, C. Fontaine, and M. Gendry, Phys. Rev. B, 58, 10, 452, 1998. 11) T. P. Pearsall, R. Carles, and J. C. Portal, Appl. Phys. Lett., 42, 436, 1983. 12) J. P. Estrera, P. D. Stevens, R. Glosser, W. M. Duncan, Y. C. Kao, H. Y. Liu, and E. A. Beam III, Appl. Phys. Lett., 61, 1927, 1992. 13) G. Landa, R. Carles, and J. B. Renucci, Solid State Commun., 86, 351, 1993. 14) R. Cuscó, L. Artús, S. Hernández, J. Ibáñez, and M. Hopkinson, Phys. Rev. B, 65, 35210, 2002. 15) M. N. Blanco, E. Redondo, F. Calle, I. Mártil, and G. González-Díaz, J. Appl. Phys., 87, 3478, 2000. 16) S. Hernández, N. Blanco, I. Mártil, G. González-Díaz, R. Cuscó, and L. Artús, to appear in J. Appl. Phys., 2003.
dspace.entity.typePublication
relation.isAuthorOfPublicationa5ab602d-705f-4080-b4eb-53772168a203
relation.isAuthorOfPublication.latestForDiscoverya5ab602d-705f-4080-b4eb-53772168a203

Download

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
Gonzalez-Diaz,G 64libre.pdf
Size:
209.6 KB
Format:
Adobe Portable Document Format
downoload Download

Collections

Artículos