Asymptotics of the trap-dominated Gunn effect in p-type Ge

dc.contributor.authorBonilla, L.L.
dc.contributor.authorHernando, Pedro J.
dc.contributor.authorHerrero, Miguel A.
dc.contributor.authorKindelan, M.
dc.contributor.authorVelázquez, J.J. L.
dc.description.abstractWe present an asymptotic analysis of the Gunn effect in a drift-diffusion model - including electric-field-dependent generation-recombination processes - for long samples of strongly compensated p-type Ge at low temperature and under d.c. voltage bias. During each Gunn oscillation, there are different stages corresponding to the generation, motion and annihilation of solitary waves. Each stage may be described by one evolution equation for only one degree of freedom (the current density), except for the generation of each new wave. The wave generation is a faster process that may be described by solving a semiinfinite canonical problem. As a result of our study we have found that (depending on the boundary condition) one or several solitary waves may be shed during each period of the oscillation. Examples of numerical simulations validating our analysis are included.
dc.description.departmentDepto. de Análisis Matemático y Matemática Aplicada
dc.description.facultyFac. de Ciencias Matemáticas
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dc.journal.titlePhysica D-Nonlinear Phenomena
dc.rights.accessRightsrestricted access
dc.subject.keywordGunn effect
dc.subject.keywordwavefront dynamics
dc.subject.keywordwave shedding at boundaries
dc.subject.keywordspontaneous current instabilities
dc.subject.keywordspace-charge domains
dc.subject.keyworddc voltage bias
dc.subject.keywordextrinsic semiconductors
dc.subject.keywordspatial measurements
dc.subject.keywordchaotic dynamics
dc.subject.keywordultrapure ge
dc.subject.unesco2202 Electromagnetismo
dc.titleAsymptotics of the trap-dominated Gunn effect in p-type Ge
dc.typejournal article
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