Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶B

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dc.contributor.authorAbuin Herráez, Manuel
dc.date.accessioned2023-06-18T05:43:21Z
dc.date.available2023-06-18T05:43:21Z
dc.date.issued2015-05-13
dc.description© 2015 American Physical Society. This work was supported by the French Agence Nationale de la Recherche (ANR) under Contract SurMott, No. NT-09-618999, and by Spanish Ministerio de Economía y Competitividad, Project No. MAT2014-59966-R. W. S. and D. G. T. contributed equally to this work. Articulo firmado por más de 10 autores.
dc.description.abstractDynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250 degrees C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground states.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Economía y Competitividad (MINECO)
dc.description.sponsorshipFrench Agence Nationale de la Recherche (ANR) under Contract SurMott
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/41524
dc.identifier.doi10.1103/PhysRevLett.114.196101
dc.identifier.issn0031-9007
dc.identifier.officialurlhttp://dx.doi.org/10.1103/PhysRevLett.114.196101
dc.identifier.relatedurlhttp://journals.aps.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/23154
dc.issue.number19
dc.journal.titlePhysical review letters
dc.language.isoeng
dc.publisherAmerican Physical Society
dc.relation.projectIDMAT2014-59966-R
dc.relation.projectIDNT-09-618999
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordCharge-density-wave
dc.subject.keywordPhase-transition
dc.subject.keywordSemiconductor surface
dc.subject.keywordSuperconductivity
dc.subject.keywordSn/Ge(Iii)
dc.subject.keywordOrder
dc.subject.keywordMetal
dc.subject.ucmFísica de materiales
dc.titleUltrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶B
dc.typejournal article
dc.volume.number114
dspace.entity.typePublication
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