Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶B
Loading...
Download
Official URL
Full text at PDC
Publication date
2015
Authors
Advisors (or tutors)
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
American Physical Society
Citations
Exportar
Citation
Srour, W., et al. «Ultrafast Atomic Diffusion Inducing a Reversible ( 2 3 × 2 3 ) R 30 ° ↔ ( 3 × 3 ) R 30 ° Transition on Sn / Si ( 111 ) ∶ B». Physical Review Letters, vol. 114, n.o 19, mayo de 2015, p. 196101. DOI.org (Crossref), https://doi.org/10.1103/PhysRevLett.114.196101.
Abstract
Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250 degrees C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground states.
Description
© 2015 American Physical Society.
This work was supported by the French Agence Nationale de la Recherche (ANR) under Contract SurMott, No. NT-09-618999, and by Spanish Ministerio de Economía y Competitividad, Project No. MAT2014-59966-R.
W. S. and D. G. T. contributed equally to this work.
Articulo firmado por más de 10 autores.