Para depositar en Docta Complutense, identifícate con tu correo @ucm.es en el SSO institucional: Haz clic en el desplegable de INICIO DE SESIÓN situado en la parte superior derecha de la pantalla. Introduce tu correo electrónico y tu contraseña de la UCM y haz clic en el botón MI CUENTA UCM, no autenticación con contraseña.
 

Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶B

Loading...
Thumbnail Image

Full text at PDC

Publication date

2015

Advisors (or tutors)

Editors

Journal Title

Journal ISSN

Volume Title

Publisher

American Physical Society
Citations
Google Scholar

Citation

Srour, W., et al. «Ultrafast Atomic Diffusion Inducing a Reversible ( 2 3 × 2 3 ) R 30 ° ↔ ( 3 × 3 ) R 30 ° Transition on Sn / Si ( 111 ) ∶ B». Physical Review Letters, vol. 114, n.o 19, mayo de 2015, p. 196101. DOI.org (Crossref), https://doi.org/10.1103/PhysRevLett.114.196101.

Abstract

Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250 degrees C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground states.

Research Projects

Organizational Units

Journal Issue

Description

© 2015 American Physical Society. This work was supported by the French Agence Nationale de la Recherche (ANR) under Contract SurMott, No. NT-09-618999, and by Spanish Ministerio de Economía y Competitividad, Project No. MAT2014-59966-R. W. S. and D. G. T. contributed equally to this work. Articulo firmado por más de 10 autores.

Unesco subjects

Keywords

Collections