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Drain temperature dependence on ambient temperature for a cryogenic low noise C-band amplifier

dc.book.titleEUROPEAN MICROWAVE 97, CONFERENCE + EXHIBITION
dc.contributor.authorMuñoz San Martín, Sagrario
dc.contributor.authorSebastián Franco, José Luis
dc.contributor.authorMiranda Pantoja, José Miguel
dc.date.accessioned2023-06-20T21:08:53Z
dc.date.available2023-06-20T21:08:53Z
dc.date.issued1997
dc.descriptionEuropean Microwave Conference and Exhibition- Bridging the Gap Between Industry and Academia (EuMC 97)(27.1997, Jerusalén, Israel).
dc.description.abstractA comparison between predicted and measured noise temperatures for cryogenic HEMT amplifiers is presented by using the Pospieszalski's noise model. A good agreement between predicted and measured amplifier's noise performance is obtained both at room and cryogenic temperatures. However, the predicted values overestimate noise temperature in the center part of the measured temperature range (50K - 230K). A parabolic dependence for the drain temperature with ambient temperature is proposed to obtain a better fitting to the experimental results.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/24770
dc.identifier.doi10.1109/EUMA.1997.337780
dc.identifier.officialurlhttp://dx.doi.org/10.1109/EUMA.1997.337780
dc.identifier.relatedurlhttp://ieeexplore.ieee.org
dc.identifier.relatedurlhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4138821
dc.identifier.urihttps://hdl.handle.net/20.500.14352/60819
dc.language.isoeng
dc.page.final118
dc.page.initial114
dc.page.total5
dc.publication.placeJerusalén, Israel
dc.publisherIEEE
dc.relation.ispartofseriesBRIDGING THE GAP BETWEEN INDUSTRY AND ACADEMIA
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordEngineering
dc.subject.keywordElectrical & Electronic.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleDrain temperature dependence on ambient temperature for a cryogenic low noise C-band amplifier
dc.typebook part
dc.volume.numberI, II
dcterms.references(1) A. F. Podell. "A Functional GaAs FET Noise Model". May 1981, IEEE Trans on ED, Vol. 28, pp. 511-517. (2) M. S. Gupta and P. T. Greiling. "Microwave Noise Characterization of GaAs MESFET's: Determination of Extrinsic Noise Parameters". Apr. 1988, IEEE Trans. on MTT, Vol. 36, pp. 745-751. (3) M. Pospieszalski. "Model of Noise Parameters of MESFETs and MODFETs and their Frequency and Temperature Dependence". Sept. 1989. IEEE Trans. on MMT, Vol. 37, pp. 1340-1350. (4) M. W. Pospieszalski and A. C. Niedzwiecki. "FET Noise Model and On-Wafer Measurement of Noise Parameters". Proc. of 1991 Int. Microwave Symp. (5) A. Caddemi, A. di Paola and M. Sanino. "Full Characterization of Microwave Low-Noise Packaged HEMT's: Measurements Versus Modeling". Apr. 1997, IEEE Trans. Instrum. Meas. Vol. 42, n° 2, pp. 490-494. (6) M. Pospieszalski. "Cryogenically-Cooled HFET Amplifiers and Receivers: State of the Art and Future Trends". 1992, IEEE MTT-S Digest. pp. 1369-1372. (7) M. Pospieszalski et al. "Very Low Noise and Low Power Operation of Cryogenic AlInAs/GaInAs/InP HFET's". 1994, IEEE MTT-S Digest. pp. 1345-1346. (8) J. D. Gallego. "Cryogenic C-Band HEMT Amplifier Prototypes For IRAM". Technical Report CAY 1. (9) MMICAD Ver. 5.20. Monolithic and Microwave Integrated Circuit Analysis and Design, 1991, Optotek Ltd., 62 Steacie Drive, Kanata, Ontario K2K2A9, Canada.
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relation.isAuthorOfPublication.latestForDiscovery921de6b9-d035-46c5-8c6e-9650962c04af

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