Microwave noise modeling of InP based MODFETs biased for low power consumption
| dc.contributor.author | Miranda Pantoja, José Miguel | |
| dc.contributor.author | Sebastián Franco, José Luis | |
| dc.date.accessioned | 2023-06-20T18:55:51Z | |
| dc.date.available | 2023-06-20T18:55:51Z | |
| dc.date.issued | 2000-11 | |
| dc.description | © 2000 IEEE. | |
| dc.description.abstract | This paper presents the fabrication, experimental characterization and modeling of 0.15 mum gate-length lattice matched MODFETs based on InP technology. The variation of the drain noise temperature of the Pospieszalski model (T-D) with the applied bias has been investigated under very low power consumption conditions, and a noticeably complex dependence of this factor on the drain current has been observed, In fact, T-D can decrease with increasing drain currents, and suffers a strong increase as a function of the drain voltage even at very low values of the drain current. However, all of these effects can be qualitatively explained from physical considerations. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24709 | |
| dc.identifier.doi | 10.1109/75.888835 | |
| dc.identifier.issn | 1051-8207 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1109/75.888835 | |
| dc.identifier.relatedurl | http://ieeexplore.ieee.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/58946 | |
| dc.issue.number | 11 | |
| dc.journal.title | IEEE Microwave and Guided Wave Letters | |
| dc.language.iso | eng | |
| dc.page.final | 471 | |
| dc.page.initial | 469 | |
| dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | |
| dc.rights.accessRights | restricted access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Gate. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Microwave noise modeling of InP based MODFETs biased for low power consumption | |
| dc.type | journal article | |
| dc.volume.number | 10 | |
| dcterms.references | [1] W. Pospieszalski, “Modeling of noise paramaters of MESFET’s and MODFET and their frequency and temperature dependence,” IEEE Trans. Microwave Theory Tech., vol. 37, pp. 1340–1350, Sept. 1989. [2] P. Heymann, M. Rudolph, H. Prinzler, R. Doerner, L. Klapproth, and G. Bök, “Experimental evaluation of microwave field effect transistor noise models,” IEEE Trans Microwave Theory Tech., vol. 47, pp. 156–163, Feb. 1999. [3] M. Nawaz, S. H. M. Persson, H. Zirath, E. Choumas, A. Mellberg, and E. L. Kollberg, “A new reliable fabrication process for InP based HEMT’s and MMIC’s with gate length from 0.06 to 0.2 um,” in Proc. GaAs’99 Symp., European Microwave Week, Münich, Germany, Oct. 1999, pp. 200–203. [4] M. García, J. Stenarson, K. Yhland, and H. Zirath, “A new extraction method for the two-parameter FET temperature noise model,” IEEE Trans. Microwave Theory Tech., vol. 46, pp. 1679–1685, Nov. 1998. [5] N. Rorsman, M. García, C. Karlsson, and H. Zirath, “Accurate small signal modeling of HFET’s for millimeter wave applications,” IEEE Trans. Microwave Theory Tech., vol. 44, pp. 432–437, Mar. 1996. [6] D.-S. Shin, J. B. Lee, H. S. Min, J.-E. Oh, Y.-J. Park,W. Jung, and D. S. Ma, “Analytical noise model with the influence of shot noise induced by the gate leakage current for submicrometer gate-length high-electron-mobility transistors,” IEEE Trans. Electron Devices, vol. 44, pp. 1883–1887, Nov. 1997. [7] R. Reuter, M. Agethen, U. Auer, S. van Waasen, D. Peters, W. Brockerhoff, and F.-J. Tegude, “Investigation and modeling of impact ionization with regard to RF and noise behavior of HFET,” IEEE Trans. Microwave Theory Tech., vol. 45, pp. 977–983, June 1997. [8] J. M. Miranda, H. Zirath, M. García, and J. L. Sebastián, “Noise performance of submicron HEMT channels under low power consumption operation,” in Proc. IEEE IMS2000, vol. 2, Boston, MA, June 2000, pp. 1233–1236. [9] A. Cappy, “Noise modeling and measurement techniques,” IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1–10, Jan. 1988. [10] A. Jelenski, A. Grüb, V. Krozer, and H. L. Hartnagel, “New approach to the design and the fabrication of THz schottky barrier diodes,” IEEE Trans. Microwave Theory Tech., vol. 41, pp. 549–557, Apr. 1993. [11] A. Jelenski, E. Kollberg, and H. Zirath, “Broad band noise mechanisms and noise measurements of metal-semiconductor junctions,” IEEE Trans. Microwave Theory Tech., vol. MTT-34, pp. 1193–1201, Nov. 1986. [12] T. Mizutani, M. Arakawa, and S. Kishimoto, “Two-dimensional potential profile measurement of GaAs HEMT’s by Kelvin Probe force microscopy,” IEEE Electron Device Lett., vol. 18, pp. 423–425, Sept. 1997. [13] J. Mateos, T. González, D. Pardo, V. Hoel, and A. Cappy, “Effect of the T-gate on the performance of recessed HEMT’s. A Monte Carlo analysis,” Semicond. Sci. Technol., vol. 14, pp. 864–870, 1999. [14] A. Matulionis, “Hot-electron noise in HEMT channels and other 2- DEG structures,” in Proc. 5th Eur. Gallium Arsenide and Related III–V Compounds Applications Symp. GaAs’97, Bologna, Italy, Sept. 3–5, 1997, pp. 165–174. [15] V. Aninkevicius, B. Henle, E. Kohn,W. Leitch, J. Liberis, A. Matulionis, and P. Sakalas, “Hot-electron noise in InGaAs-based channels,” in Proceedings of the 20th Workshop on Compound Semiconductor Devices and Integrated Circuits. Vilnius, Lithuania: Vilnius Univ. Press, 1996, pp. 34–35. | |
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| relation.isAuthorOfPublication | 53e43c76-7bce-46fd-9520-0edb4620c996 | |
| relation.isAuthorOfPublication.latestForDiscovery | 328f9716-2012-44f9-aacc-ef8d48782a77 |
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