Defect energy levels in Cd-based compounds

Abstract

The influence of deep levels on the electrical and optical properties of semiconductors is widely acknowledged. We have utilized several complementary spectroscopic techniques to investigate the deep traps in undoped CdTe, CdTe:Cl and Cd0.8Zn0.2Te. The electrical activity of the defects has bean studied by DLTS, PICTS and P-DLTS while their optical properties have been characterized by cathodoluminescence, CL. Various deep levels have been found and by critically comparing the results obtained with the different techniques in different samples, we were able to achieve a better understanding of the nature of the defects.