Recombination processes in Te-doped ZnO microstructures

Simple item page
dc.contributor.authorIribarren, A.
dc.contributor.authorFernández Sánchez, Paloma
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.date.accessioned2023-06-19T13:24:08Z
dc.date.available2023-06-19T13:24:08Z
dc.date.issued2014-03
dc.description(C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This research was partially supported by MCINN (Projects MAT2009-07882, MAT2012-31959 and CSD2009-00013).
dc.description.abstractCathodoluminescence (CL) of Te doped elongated ZnO microstructures obtained by a vapour-solid (V-S) technique has been investigated. The CL intensity changes along the microstructures axis are related to the gradient of Te content, which influences the intensity of the ZnO deep-level (DL) emission band. The main defects are vacancy complexes which are partially passivated by the isoelectronic Te doping. The weight on the total luminescence of the radiative processes related to defects has been estimated. A straightforward method based on the measurement of the band-to-band luminescence intensity under constant excitation and experimental conditions has been used. The recombination lifetimes for transition through defect levels were also estimated. [GRAPHICS] SEM image and cathodoluminescence emission of needle- and pencil-like TeO2-doped ZnO microstructures.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMCINN
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/25623
dc.identifier.doi10.1002/pssb.201248600
dc.identifier.issn0370-1972
dc.identifier.officialurlhttp://dx.doi.org/10.1002/pssb.201248600
dc.identifier.relatedurlhttp://onlinelibrary.wiley.com
dc.identifier.urihttps://hdl.handle.net/20.500.14352/33549
dc.issue.number3
dc.journal.titlePhysica Status Solidi B-Basic Solid State Physics
dc.page.final688
dc.page.initial683
dc.publisherWiley-V C H Verlag Gmbh
dc.relation.projectIDMAT2009-07882
dc.relation.projectIDMAT2012-31959
dc.relation.projectIDCSD2009-00013
dc.rights.accessRightsmetadata only access
dc.subject.cdu538.9
dc.subject.keywordPoint-Defects
dc.subject.keywordThin-Films
dc.subject.keywordLuminescence
dc.subject.keywordCathodoluminescence
dc.subject.keywordPhotoluminescence
dc.subject.keywordPhotoconductivity
dc.subject.keywordSemiconductors
dc.subject.keywordEpilayers
dc.subject.keywordZnte
dc.subject.ucmFísica de materiales
dc.titleRecombination processes in Te-doped ZnO microstructures
dc.typejournal article
dc.volume.number251
dspace.entity.typePublication
relation.isAuthorOfPublicationdaf4b879-c4a8-4121-aaff-e6ba47195545
relation.isAuthorOfPublication68dabfe9-5aec-4207-bf8a-0851f2e37e2c
relation.isAuthorOfPublication.latestForDiscoverydaf4b879-c4a8-4121-aaff-e6ba47195545
Download
Collections
Artículos